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ST Microelectronics
ST Microelectronics

BTA16 Datasheet

16A TRIACS


BTA16 Datasheet Preview


BTA16, BTB16
T1610, T1635
16 A Snubberless™, logic level and standard Triacs
Features
Medium current Triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic for
insulated BTA
High commutation (4Q) or very high
commutation (3Q) capability
BTA series UL1557 certified (File ref: 81734)
RoHS ( 2002/95/EC) compliant
Insulated tab (BTA series, rated at 2500 VRMS)
Applications
Snubberless versions (BTA/BTB...W and
T1635) especially recommended for use on
inductive loads, because of their high
commutation performances
On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
A2
G
A1
A2
A1 A2
G
D2PAK
T1610G
T1635G
A2
A1
A2
G
TO-220AB
insulated
BTA16
A1
A2
G
TO-220AB
BTB16
Description
Available either in through-hole or surface-mount
packages, the BTA16, BTB16, T1610 and T1635
Triacs series are suitable for general purpose
mains power AC switching.
Table 1. Device summary
Symbol
Parameter
BTA16 (1)
IT(RMS)
On-state rms current
VDRM/VRRM Repetitive peak off-state voltage
IGT (Snubberless) Triggering gate current
IGT (logic level) Triggering gate current
IGT (standard) Triggering gate current
1. Insulated
16
600/800
35/50
10
25/50
TM: Snubberless is a trademark of STMicroelectronics
BTB16
16
600/800
35/50
10
25/50
T1610
16
600/800
-
10
-
T1635
16
600/800
35
-
-
March 2010
Doc ID 7471 Rev 9
1/10
www.st.com
10
Page 1

Characteristics
1 Characteristics
BTA16, BTB16, T1610, T1635
Table 2. Absolute maximum ratings
Symbol
Parameter
IT(RMS)
On-state rms current
(full sine wave)
D2PAK /
TO-220AB
TO-220AB
insulated
ITSM
I²t
dI/dt
VDSM/
VRSM
IGM
PG(AV)
Tstg
Tj
Non repetitive surge peak on-state
current
(full cycle, Tj initial = 25 °C)
I²t value for fusing
F = 50 Hz
F = 60 Hz
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
F = 120 Hz
Non repetitive surge peak off-state
voltage
tp = 10 ms
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage temperature range
Maximum operating junction temperature
Value
Tc = 100 °C
Tc = 86 °C
t = 20 ms
t = 16.7 ms
16
160
168
144
Tj = 125 °C
50
Tj = 25 °C
VDRM/VRRM
+ 100
Tj = 125 °C
Tj = 125 °C
4
1
-40 to + 150
-40 to + 125
Unit
A
A
A²s
A/µs
V
A
W
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol Test conditions Quadrant
BTA16 / BTB16
T1610 T1635
SW CW BW
IGT (1)
VGT
VGD
IH (2)
VD = 12 V
RL = 33 Ω
VD = VDRM
RL = 3.3 kΩ
Tj = 125 °C
IT = 500 mA
IL IG = 1.2 IGT
I - II - III Max. 10 35 10 35 50
I - II - III Max.
1.3
I - II - III Min.
0.2
Max. 15 35 15 35 50
I - III 25 50 25 50 70
Max.
II 30 60 30 60 80
dV/dt (2)
VD = 67 %VDRM
gate open
Tj = 125 °C Min.
40
500
40 500 1000
(dV/dt)c = 0.1 V/µs Tj = 125 °C
8.5 - 8.5 -
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Tj = 125 °C
Min.
3.0
-
3.0 -
-
-
Without snubber Tj = 125 °C
- 8.5 - 8.5 14
1. Minimum IGT is guaranted at 5% of IGT max
2. For both polarities of A2 referenced to A1
Unit
mA
V
V
mA
mA
V/µs
A/ms
2/10 Doc ID 7471 Rev 9
Page 2

BTA16, BTB16, T1610, T1635
Characteristics
Table 4.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
standard (4 quadrants)
Test conditions
Quadrant
BTA16 / BTB16
CB
Unit
IGT (1)
VGT
VD = 12 V
RL = 33 Ω
I - II - III
IV
ALL
VGD
IH (2)
VD = VDRM RL = 3.3 kΩ Tj = 125 °C
IT = 500 mA
ALL
IL IG = 1.2 IGT
I - III - IV
II
dV/dt (2) VD = 67 %VDRM gate open
Tj = 125 °C
(dV/dt)c
(2)
(dI/dt)c = 7 A/ms
Tj = 125 °C
Max.
Max.
Min.
Max.
Max.
Min.
Min.
25 50
50 100
1.3
0.2
25 50
40 60
80 120
200 400
5 10
mA
V
V
mA
mA
V/µs
V/µs
1. Minimum IGT is guaranted at 5% of IGT max
2. For both polarities of A2 referenced to A1
Table 5. Static characteristics
Symbol
Test conditions
Value
Unit
VT (2)
Vto (2)
Rd (2)
ITM = 22.5 A tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Max.
Max.
Max.
Max.
1.55 V
0.85 V
25 mΩ
5 µA
2 mA
Table 6. Thermal resistance
Symbol
Parameter
Rth(j-c)
Rth(j-a)
Junction to case (AC)
D2PAK / TO-220AB
TO-220AB insulated
S(1) = 1 cm² D2PAK
Junction to ambient
TO-220AB / TO-220AB
insulated
1. S = Copper surface under tab
Value
1.2
2.1
45
60
Unit
°C/W
°C/W
Doc ID 7471 Rev 9
3/10
Page 3

Characteristics
BTA16, BTB16, T1610, T1635
Figure 1.
P(W)
20
18
16
14
12
10
8
6
4
2
0
02
Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle)
temperature (full cycle)
IT(RMS)(A)
18
16
14
12
10
8
6
4
IT(RMS)(A)
2
0
4 6 8 10 12 14 16
0
25
BTB / T16
BTA
TC(°C)
50 75 100 125
Figure 3. On-state rms current versus
ambient temperature (full cycle)
Figure 4. Relative variation of thermal
impedance versus pulse duration
IT(RMS)(A)
4.0
printed circuit board FR4, copper thickness: 35 µm
3.5
3.0
D2PAK
(S=1cm2)
2.5
2.0
1.5
1.0
0.5
TC(°C)
0.0
0 25 50 75 100 125
K=[Zth/Rth]
1E+0
Zth(j-c)
1E-1
1E-2
1E-3
1E-2
Zth(j-a)
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
Figure 5. On-state characteristics
(maximum values)
Figure 6. Surge peak on-state current versus
number of cycles
ITM(A)
200
100
Tj max.
Vto = 0.85V
Rd = 25 mΩ
ITSM(A)
180
160
140
Tj = Tj max.
120
Tj = 25°C.
10
100
80
60
Repetitive
TC=85°C
40
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
20
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10 100
t=20ms
One cycle
1000
4/10 Doc ID 7471 Rev 9
Page 4
Part Number BTA16
Manufactur ST Microelectronics
Description 16A TRIACS
Total Page 10 Pages
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