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ST Microelectronics
ST Microelectronics

BTA16 Datasheet

16A TRIACS


BTA16 Datasheet Preview


...FEATURES
HIGH SURGE CURRENT CAPABILITY
COMMUTATION : (dV/dt)c > 10V/µs
BTA Family :
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
BTA16 B
BTB16 B
STANDARD TRIACS
DESCRIPTION
The BTA/BTB16 B triac family are high perform-
ance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where high surge current capability is re-
quired. Application such as phase control and
static switching on inductive or resistive load.
ABSOLUTE RATINGS (limiting values)
A1
A2 G
TO220AB
(Plastic)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(360° conduction angle)
BTA
BTB
Tc = 80 °C
Tc = 90 °C
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2t value
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Value
16
170
160
128
10
50
- 40 to + 150
- 40 to + 125
260
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
BTA / BTB16-... B
400 600 700 800
400 600 700 800
March 1995
Unit
A
A
A2s
A/µs
°C
°C
°C
Unit
V
1/5
Page 1

BTA16 B / BTB16 B
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Parameter
Value
60
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA
BTB
BTA
BTB
2.9
2.3
2.2
1.75
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
VGM = 16V (tp = 20 µs).
Symbol
Test Conditions
IGT VD=12V (DC) RL=33
VGT
VGD
tgt
IL
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 22.5A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Quadrant
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
I-II-III
IV
I-II-III-IV
I-II-III-IV
I-II-III-IV
MAX
MAX
MAX
MIN
TYP
Suffix
B
50
100
1.5
0.2
2
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
I-III-IV
II
TYP
MAX
MAX
MAX
MAX
MIN
40
70
50
1.6
0.01
2
250
(dV/dt)c * (dI/dt)c = 7A/ms
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN 10
Unit
°C/W
°C/W
°C/W
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
V/µs
2/5
Page 2

Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
BTA16 B / BTB16 B
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
Fig.4 : RMS on-state current versus case temperature.
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Zth/Rth
1
Zt h( j-c)
0.1 Zth(j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp( s)
1E+1 1E+2 5E+2
3/5
Page 3

BTA16 B / BTB16 B
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t 10ms, and
corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values).
4/5
Page 4
Part Number BTA16
Manufactur ST Microelectronics
Description 16A TRIACS
Total Page 5 Pages
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BTA16 datasheet
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