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Eupec
Eupec

BSM25GD120DN2 Datasheet

IGBT POWER MODULE


BSM25GD120DN2 Datasheet Preview


BSM 25 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 25 GD 120 DN2
BSM 25 GD120DN2E3224
VCE IC
1200V 35A
1200V 35A
Package
ECONOPACK 2
ECONOPACK 2K
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 k
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67076-A2505-A67
C67070-A2505-A67
Values
1200
Unit
V
1200
± 20
35
25
A
70
50
200
+ 150
-40 ... + 125
0.6
1
2500
16
11
F
40 / 125 / 56
W
°C
K/W
Vac
mm
sec
1 Oct-20-1997
Page 1

BSM 25 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 1 mA
4.5 5.5 6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 25 A, Tj = 25 °C
- 2.5 3
VGE = 15 V, IC = 25 A, Tj = 125 °C
- 3.1 3.7
Zero gate voltage collector current
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
- 0.5 0.8
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
- 2-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
--
180
AC Characteristics
Transconductance
VCE = 20 V, IC = 25 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
gfs
Ciss
Coss
Crss
10
-
-
-
--
1650 -
250 -
110 -
Unit
V
mA
nA
S
pF
2 Oct-20-1997
Page 2

BSM 25 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 25 A
RGon = 47
-
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 25 A
RGon = 47
-
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 25 A
RGoff = 47
-
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 25 A
RGoff = 47
-
75
65
400
50
150
130
600
100
Free-Wheel Diode
Diode forward voltage
IF = 25 A, VGE = 0 V, Tj = 25 °C
IF = 25 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
IF = 25 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
IF = 25 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
Tj = 125 °C
VF
-
-
trr
-
Qrr
-
-
2.3 2.8
1.8 -
0.13 -
2.3 -
6-
Unit
ns
V
µs
µC
3 Oct-20-1997
Page 3

BSM 25 GD 120 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj 150 °C
220
W
Ptot 180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE 15 V , Tj 150 °C
40
A
IC 32
28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj 150 °C
10 2
tp = 11.0µs
A
IC
10 1
100 µs
10 0
1 ms
10 ms
DC
10 -1
10 0 10 1 10 2 10 3 V
VCE
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
ZthJC
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
4 Oct-20-1997
Page 4
Part Number BSM25GD120DN2
Manufactur Eupec
Description IGBT POWER MODULE
Total Page 9 Pages
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