http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf


Power Innovations Limited
Power Innovations Limited

BD901 Datasheet

NPN SILICON POWER DARLINGTONS


BD901 Datasheet Preview


Copyright © 1997, Power Innovations Limited, UK
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BD896, BD898, BD900 and BD902
q 70 W at 25°C Case Temperature
q 8 A Continuous Collector Current
q Minimum hFE of 750 at 3V, 3A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0)
Base-emitter voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Operating junction temperature range
Storage temperature range
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
TA
Tj
Tstg
VALUE
45
60
80
100
45
60
80
100
5
8
0.3
70
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Page 1

BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE(on)
VF
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = 100 mA IB = 0
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
VCE = 3 V
IC = 3 A
IB = 12 mA IC = 3 A
VCE = 3 V
IC = 3 A
IF = 8 A
(see Note 3)
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
45
60
80
100
750
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2
2
2
2
2
2.5
2.5
3.5
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.79 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = 3 A
VBE(off) = -3.5 V
IB(on) = 12 mA
RL = 10
IB(off) = -12 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1 µs
5 µs
PRODUCT INFORMATION
2
Page 2

50000
10000
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS130AD
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AB
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1000
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5 1·0
IC - Collector Current - A
Figure 1.
1·0
0·5
10 0·5 1·0
TC = -40°C
TC = 25°C
TC = 100°C
10
IC - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AC
3·0
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
IB
tp
0·5
0·5
= IC / 100
= 300 µs, duty cycle < 2%
1·0
IC - Collector Current - A
Figure 3.
10
PRODUCT INFORMATION
3
Page 3

BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS130AD
10
1·0
0·1
0.01
1·0
BD895
BD897
BD899
BD901
10 100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AB
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
Page 4
Part Number BD901
Manufactur Power Innovations Limited
Description NPN SILICON POWER DARLINGTONS
Total Page 6 Pages
PDF Download
BD901 datasheet
Download PDF File
BD901 datasheet
View Html for PC & Mobile


Related Datasheet

BD900 , BD900 , BD900 , BD900 , BD900 , BD9001F , BD9002HFP , BD900A , BD900A , BD901 , BD901 , BD901 , BD9011EKN , BD9011EKN , BD9011KV , BD9011KV , BD902 , BD902 , BD902 , BD902 , BD902 , BD9040FV , BD9045FV , BD905 , BD905 , BD906 , BD906 , BD907 , BD907 , BD908 , BD908 , BD909 , BD909 , BD909 , BD909 , BD909 , BD90C0AFPS ,

site map

webmaste! click here

contact us

Buy Components