BD249C - NPN SILICON POWER TRANSISTORSBD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997
Designed for Complementary Use with the BD250 Series 125 W at 25°C Case Temperature
SOT-93 PACKAGE (TOP VIEW) 1
q q q q
25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available
3 Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BD249 Collector-emitter voltage (RBE = 100 Ω) BD249A BD249B BD249C BD249 Collector-emitter voltage (IC = 30 mA) BD249A BD249B BD249C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction
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