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Power Innovations Limited
Power Innovations Limited

BD249C Datasheet

NPN SILICON POWER TRANSISTORS


BD249C Datasheet Preview


Copyright © 1997, Power Innovations Limited, UK
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD250 Series
q 125 W at 25°C Case Temperature
q 25 A Continuous Collector Current
q 40 A Peak Collector Current
q Customer-Specified Selections Available
B
C
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 )
Collector-emitter voltage (IC = 30 mA)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD249
BD249A
BD249B
BD249C
BD249
BD249A
BD249B
BD249C
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
55
70
90
115
45
60
80
100
5
25
40
5
125
3
90
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
Page 1

BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICES
Collector-emitter
cut-off current
ICEO
IEBO
Collector cut-off
current
Emitter cut-off
current
Forward current
hFE transfer ratio
VCE(sat)
VBE
hfe
|hfe|
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = 30 mA
(see Note 5)
VCE = 55 V
VCE = 70 V
VCE = 90 V
VCE = 115 V
VCE = 30 V
VCE = 60 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
VCE = 4 V
IB = 1.5 A
IB = 5 A
VCE = 4 V
VCE = 4 V
VCE = 10 V
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = 1.5 A
IC = 15 A
IC = 25 A
IC = 15 A
IC = 25 A
IC = 15 A
IC = 25 A
IC = 1 A
IC = 1 A
BD249
BD249A
BD249B
BD249C
BD249
BD249A
BD249B
BD249C
BD249/249A
BD249B/249C
45
60
80
100
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
10
5
25
3
0.7
0.7
0.7
0.7
1
1
1
1.8
4
2
4
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °C/W
42 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = 5 A
VBE(off) = -5 V
IB(on) = 0.5 A
RL = 5
IB(off) = -0.5 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.3 µs
0.9 µs
PRODUCT INFORMATION
2
Page 2

BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS635AD
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS635AB
10
100 1·0
10
1
0·1
1·0 10
IC - Collector Current - A
Figure 1.
0·1
IC = 25 A
IC = 300 mA
IC = 20 A
IC = 1 A
IC = 15 A
IC = 3 A
0·01
IC = 10 A
100
0·001
0·01
0·1
1·0
10
100
IB - Base Current - A
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS635AC
2·0
VCE = 4 V
TC = 25°C
1·8
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1·0 10
IC - Collector Current - A
Figure 3.
100
PRODUCT INFORMATION
3
Page 3
Part Number BD249C
Manufactur Power Innovations Limited
Description NPN SILICON POWER TRANSISTORS
Total Page 6 Pages
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BD249 , BD249 , BD249 , BD249A , BD249A , BD249A , BD249B , BD249B , BD249B , BD249C , BD249C , BD249C ,

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