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BC558 Datasheet

PNP Silicon Amplifier Transistor 625mW


BC558 Datasheet Preview


MCC
  omponents
21201 Itasca Street Chatsworth

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Features
l Through Hole Package
l 150oC Junction Temperature
Pin Configuration
Bottom View
CB E
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
BC556
BC557 VCEO
BC558
BC556
BC557 VCBO
BC558
VEBO
Value
-65
-45
-30
-80
-50
-30
-5.0
Unit
V
V
V
Collector Current(DC)
Power Dissipation@TA=25oC
Power Dissipation@TC=25oC
Thermal Resistance, Junction to
Ambient Air
IC -100 mA
Pd
625 mW
5.0 mW/oC
Pd
1.5 W
12 mW/oC
RqJA 200 oC/W
Thermal Resistance, Junction to
Case
RqJC 83.3 oC/W
Operating & Storage Temperature Tj, TSTG -55~150 oC
BC556,B
BC557,A,B,C
BC558,B
PNP Silicon
Amplifier Transistor
625mW
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .175 .185
B .175 .185
C .500
---
D .016 .020
E .135 .145
G .095 .105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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Page 1

BC556 thru BC558B
MCC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –100 µAdc)
BC556
BC557
BC558
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 V)
(IC = –2.0 mAdc, VCE = –5.0 V)
(IC = –100 mAdc, VCE = –5.0 V)
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
BC556B/557B/558B
BC557C
hFE
Collector – Emitter Saturation Voltage
(IC = –100mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0mAdc)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz)
BC556
BC557
BC558
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Min
–65
–45
–30
–80
–50
–30
–5.0
–5.0
–5.0
120
120
120
120
180
420
–0.55
Typ
90
150
270
170
290
500
120
180
300
---
–0.62
–0.7
280
320
360
3.0
Max
500
800
800
220
460
800
–0.3
–1.0
–0.7
–0.82
6.0
Unit
V
V
V
V
V
V
MHz
pF
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Page 2

BC556 thru BC558B
MCC
BC557/BC558
2.0
1.5 VCE = –10 V
TA = 25°C
1.0
0.7
0.5
0.3
0.2
–0.2
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (mAdc)
–1.0
–0.9 TA = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.7
–0.6 VBE(on) @ VCE = –10 V
–0.5
–0.4
–0.3
–0.2
–0.1 VCE(sat) @ IC/IB = 10
0
–0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50 –100
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
–2.0
TA = 25°C
–1.6
–1.2
–0.8
IC =
–10 mA
–0.4
IC = –50 mA
IC = –20 mA
IC = –200 mA
IC = –100 mA
0
–0.02
–0.1 –1.0
IB, BASE CURRENT (mA)
–10 –20
Figure 3. Collector Saturation Region
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–0.2 –1.0
–10
IC, COLLECTOR CURRENT (mA)
–100
Figure 4. Base–Emitter Temperature Coefficient
10
Cib
7.0
TA = 25°C
5.0
3.0 Cob
2.0
1.0
–0.4 –0.6
–1.0 –2.0 –4.0 –6.0 –10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
–20 –30 –40
400
300
200
150 VCE = –10 V
TA = 25°C
100
80
60
40
30
20
–0.5
–1.0 –2.0 –3.0 –5.0
–10 –20 –30 –50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
www.mccsemi.com
Page 3
Part Number BC558
Manufactur Micro Commercial Components
Description PNP Silicon Amplifier Transistor 625mW
Total Page 4 Pages
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