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NXP
NXP

BC550C Datasheet

NPN general purpose transistors


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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC549; BC550
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 22
Page 1

Philips Semiconductors
NPN general purpose transistors
Product specification
BC549; BC550
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise stages in audio frequency equipment.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC559 and BC560.
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
handbook, halfpage1
2
3
2
MAM182
3
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC549
BC550
collector-emitter voltage
BC549
BC550
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
30 V
50 V
30 V
45 V
5V
100 mA
200 mA
200 mA
500 mW
65
+150
°C
150 °C
65
+150
°C
1999 Apr 22
2
Page 2

Philips Semiconductors
NPN general purpose transistors
Product specification
BC549; BC550
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC549C; BC550C
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 10 µA; VCE = 5 V; see Fig.2
IC = 2 mA; VCE = 5 V; see Fig.2
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V; note 2
IC = 10 mA; VCE = 5 V; note 2
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 5 V;
f = 100 MHz
IC = 200 µA; VCE = 5 V;
RS = 2 k; f = 10 Hz to 15.7 kHz
IC = 200 µA; VCE = 5 V;
RS = 2 k; f = 1 kHz; B = 200 Hz
MIN.
420
580
100
TYP.
270
520
90
200
700
900
660
1.5
11
MAX. UNIT
15 nA
5 µA
100 nA
800
250 mV
600 mV
mV
mV
700 mV
770 mV
pF
pF
MHz
4 dB
4 dB
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 22
3
Page 3

Philips Semiconductors
NPN general purpose transistors
600
handbook, full pagewidth
hFE
400
VCE = 5 V
Product specification
BC549; BC550
MBH725
200
0
102
BC549C; BC550C.
101
1
10
Fig.2 DC current gain; typical values.
102 IC (mA) 103
1999 Apr 22
4
Page 4
Part Number BC550C
Manufactur NXP
Description NPN general purpose transistors
Total Page 8 Pages
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BC550C datasheet
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BC550C datasheet
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