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Semtech Corporation
Semtech Corporation

BC327 Datasheet

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications


BC327 Datasheet Preview


DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC327
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 15
Page 1

Philips Semiconductors
PNP general purpose transistor
Product specification
BC327
FEATURES
High current (max. 500 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: BC337.
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
handbook, halfpage1
2
3
2
MAM281
3
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
50
45
5
500
1
200
625
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 15
2
Page 2

Philips Semiconductors
PNP general purpose transistor
Product specification
BC327
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
0.2
UNIT
K/mW
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBE
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
BC327
BC327-16
BC327-25
BC327-40
DC current gain
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 mA; VCE = 1 V;
see Figs 2, 3 and 4
IC = 500 mA; VCE = 1 V;
see Figs 2, 3 and 4
IC = 500 mA; IB = 50 mA
IC = 500 mA; VCE = 1 V; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
100
160
250
40
80
10
100
5
100
nA
µA
nA
600
250
400
600
700
1.2
mV
V
pF
MHz
Note
1. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 15
3
Page 3

Philips Semiconductors
PNP general purpose transistor
Product specification
BC327
250
handbook, full pagewidth
hFE
200
150
100
50
0
101
BC327-16.
500
handbook, full pagewidth
hFE
400
300
200
100
0
101
BC327-25.
1999 Apr 15
VCE = 1 V
MBH717
1
10
102
IC (mA)
103
Fig.2 DC current gain; typical values.
MBH718
VCE = 1 V
1
10
102
IC (mA)
103
Fig.3 DC current gain; typical values.
4
Page 4
Part Number BC327
Manufactur Semtech Corporation
Description PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications
Total Page 8 Pages
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