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Philips
Philips

BC107 Datasheet

NPN general purpose transistors


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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BC107; BC108; BC109
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 03
File under Discrete Semiconductors, SC04
1997 Sep 03
Page 1

Philips Semiconductors
NPN general purpose transistors
Product specification
BC107; BC108; BC109
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package.
PNP complement: BC177.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to the case
handbook, halfpa1ge
2
3
2
MAM264
3
1
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BC107
BC108; BC109
VCEO
collector-emitter voltage
BC107
BC108; BC109
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
BC107
BC108
BC109
fT transition frequency
CONDITIONS
open emitter
open base
Tamb 25 °C
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN. MAX. UNIT
50 V
30 V
45 V
20 V
200 mA
300 mW
110 450
110 800
200 800
100
MHz
1997 Sep 03
2
Page 2

Philips Semiconductors
NPN general purpose transistors
Product specification
BC107; BC108; BC109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC107
BC108; BC109
collector-emitter voltage
BC107
BC108; BC109
emitter-base voltage
BC107
BC108; BC109
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-c
thermal resistance from junction to ambient note 1
thermal resistance from junction to case
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
50 V
30 V
45 V
20 V
6V
5V
100 mA
200 mA
200 mA
300 mW
65
+150
°C
175 °C
65
+150
°C
VALUE
0.5
0.2
UNIT
K/mW
K/mW
1997 Sep 03
3
Page 3

Philips Semiconductors
NPN general purpose transistors
Product specification
BC107; BC108; BC109
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
F
collector cut-off current
emitter cut-off current
DC current gain
BC107A; BC108A
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 10 µA; VCE = 5 V
− − 15 nA
− − 15 µA
− − 50 nA
90
BC107B; BC108B; BC109B
40 150
BC108C; BC109C
100 270
DC current gain
BC107A; BC108A
IC = 2 mA; VCE = 5 V
110 180 220
BC107B; BC108B; BC109B
200 290 450
BC108C; BC109C
420 520 800
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
90 250 mV
IC = 100 mA; IB = 5 mA
200 600 mV
base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 700 mV
IC = 100 mA; IB = 5 mA; note 1 900 mV
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 2
550 620 700 mV
IC = 10 mA; VCE = 5 V; note 2
− − 770 mV
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
2.5 6
pF
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz 9 pF
transition frequency
IC = 10 mA; VCB = 5 V; f = 100 MHz 100 − − MHz
noise figure
BC109B; BC109C
IC = 200 µA; VCE = 5 V; RS = 2 k;
f = 30 Hz to 15.7 kHz
− − 4 dB
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 k;
BC107A; BC108A
f = 1 kHz; B = 200 Hz
− − 10 dB
BC107B; BC108B; BC108C
BC109B; BC109C
− − 4 dB
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1997 Sep 03
4
Page 4
Part Number BC107
Manufactur Philips
Description NPN general purpose transistors
Total Page 8 Pages
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BC107 datasheet
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