http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Renesas
Renesas

B1628 Datasheet

2SB1628


B1628 Datasheet Preview


DATA SHEET
SILICON TRANSISTOR
2SB1628
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SB1628 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
FEATURES
• High current capacitance
• Low collector saturation voltage
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
Electrode connection
1: Emitter
2: Collector (fin)
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Base current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
IB(pulse)
PT
Tj
Tstg
Conditions
PW 10 ms
Duty cycle 50 %
PW 10 ms
Duty cycle 50 %
16 cm2 × 0.7 mm ceramic board used
Ratings
20
16
6.0
3.0
5.0
0.2
0.4
2.0
150
55 to +150
Unit
V
V
V
A
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16148EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
Page 1

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
hFE1
hFE2
VBE
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
Cob
ton
tstg
tf
Conditions
VCBO = 20 V, IE = 0
VEBO = 6.0 V, IC = 0
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 3.0 A
VCE = 2.0 V, IC = 0.05 A
IC = 2.0 A, IB = 0.1 A
IC = 3.0 A, IB = 0.15 A
IC = 2.0 A, IB = 0.1 A
VCE = –3.0 V, IE = 0.5 A
VCB = –10 V, IE = 0, f = 1 MHz
IC = 1.0 A, VCC = 10 V
IB1 = IB2 = 0.1 A
RL = 10
hFE CLASSIFICATION
Marking
hFE1
ZX
140 to 280
ZY
200 to 400
ZZ
280 to 560
2SB1628
MIN.
140
70
600
TYP.
280
MAX.
100
100
560
660
240
350
0.95
320
45
70
110
40
700
350
550
1.2
Unit
nA
nA
mV
mV
mV
V
MHz
pF
ns
ns
ns
2 Data Sheet D16148EJ1V0DS
Page 2

TYPICAL CHARACTERISTICS (Ta = 25°C)
2SB1628
Data Sheet D16148EJ1V0DS
3
Page 3
Part Number B1628
Manufactur Renesas
Description 2SB1628
Total Page 6 Pages
PDF Download
B1628 datasheet pdf
Download PDF File
B1628 view html
View PDF for Mobile


Related Datasheet

B1624 , B1624 , B1625 , B1626 , B1628 ,

site map

webmaste! click here

contact us

Buy Components