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Panasonic Semiconductor
Panasonic Semiconductor

B1548 Datasheet

2SB1548


B1548 Datasheet Preview


Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
www.DataSheCeto4lUle.cctoormto 2SB1548
base voltage 2SB1548A
VCBO
–60
–80
V
Collector to 2SB1548
emitter voltage 2SB1548A
VCEO
–60
–80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–5
–3
25
2
V
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
Unit: mm
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff
2SB1548
current
2SB1548A
Collector cutoff
2SB1548
current
2SB1548A
Emitter cutoff current
Collector to emitter 2SB1548
voltage
2SB1548A
ICES
ICEO
IEBO
VCEO
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
–60
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
70
10
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
typ
30
0.5
1.2
0.3
max
–200
–200
–300
–300
–1
250
Unit
µA
µA
mA
V
–1.8 V
–1.2 V
MHz
µs
µs
µs
1
Page 1

Power Transistors
PC — Ta
40
36
(1) TC=Ta
(2) Without heat sink (PC=2W)
32
28
(1)
24
20
16
12
8
4 (2)
0
0 20 40 60 80 100 120 140 160
www.DataSheet4U.cAommbient temperature Ta (˚C)
IC — VCE
–6
TC=25˚C
–5
–4 IB=–100mA
–80mA
–3 –60mA
–40mA
–30mA
–2 –20mA
–16mA
–12mA
–1
–8mA
–4mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1548, 2SB1548A
IC — VBE
–8
VCE=–4V
–7 TC=25˚C
–6
–5
–4
–3
–2
–1
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
VCE(sat) — IC
–10
IC/IB=10
TC=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
1000
hFE — IC
VCE=–4V
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
1000
300
100
fT — IC
VCE=–10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
TC=25˚C
–10
ICP
–3
IC
–1
t=1ms
DC 10ms
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 80 × t2mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2
Page 2
Part Number B1548
Manufactur Panasonic Semiconductor
Description 2SB1548
Total Page 2 Pages
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