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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AON2408 Datasheet

20V N-Channel MOSFET


AON2408 Datasheet Preview


AON2408
20V N-Channel MOSFET
General Description
Product Summary
The AON2408 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
20V
8A
< 14.5m
< 19m
Top View
DFN 2x2B
Bottom View
D
D
S
D
S
Pin 1
G
D
D
Pin 1
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=100°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
8
6
32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t 10s
Steady-State
Symbol
RθJA
Typ
37
66
Max
45
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : Dec 2011
www.aosmd.com
Page 1 of 6
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Page 1

AON2408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±12V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
0.5 0.83 1.2
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
32
A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=8A
TJ=125°C
11.6 14.5
16.3 20.5
m
VGS=2.5V, ID=4A
15 19 m
gFS Forward Transconductance
VDS=5V, ID=8A
50 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.65 1
V
IS Maximum Body-Diode Continuous Current
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
782 pF
158 pF
98 pF
2.4
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=10V, ID=8A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=4.5V, VDS=10V, RL=1.25,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
7
1
2.4
3
4.5
28
6
11
2.7
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
www.aosmd.com
Page 2 of 6
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Page 2

AON2408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
4.5V
30
2.5V
3.5V
20
VDS=5V
15
1.8V
20 10
10
VGS=1.5V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
50
40
VGS=1.8V
30
20 VGS=2.5V
10
VGS=4.5V
0
0 4 8 12 16
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5 125°C
25°C
0
0 0.5 1 1.5 2 2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
3
1.6
VGS=4.5V
1.4 VGS=2.5V ID=8A
ID=4A
1.2
VGS=1.8V
ID=2A
1
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
ID=8A
40
30
125°C
20
10
25°C
0
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Dec 2011
www.aosmd.com
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/
Page 3

AON2408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=10V
ID=8A
4
3
2
1
1200
1000
800
600
400
200
Ciss
Coss
Crss
0
0246
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
0 5 10 15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
100.0
10.0
RDS(ON)
limited
1.0
TJ(Max)=150°C
0.1 TC=25°C
10µs
10µs 100µs
1ms
10ms
DC
10000
1000
100
10
TA=25°C
0.0
0.01
0.1 1
VDS (Volts)
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1
0.00001
0.001
0.1
10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01 Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
100 1000
Rev 0: Dec 2011
www.aosmd.com
Page 4 of 6
Free Datasheet http://www.datasheet4u.com/
Page 4
Part Number AON2408
Manufactur Alpha & Omega Semiconductors
Description 20V N-Channel MOSFET
Total Page 5 Pages
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