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Analog Devices
Analog Devices

AD811 Datasheet

High Performance Video Op Amp


AD811 Datasheet Preview


a
High Performance
Video Op Amp
AD811
FEATURES
High Speed
140 MHz Bandwidth (3 dB, G = +1)
120 MHz Bandwidth (3 dB, G = +2)
35 MHz Bandwidth (0.1 dB, G = +2)
2500 V/s Slew Rate
25 ns Settling Time to 0.1% (For a 2 V Step)
65 ns Settling Time to 0.01% (For a 10 V Step)
Excellent Video Performance (RL =150 )
0.01% Differential Gain, 0.01؇ Differential Phase
Voltage Noise of 1.9 nVHz
Low Distortion: THD = –74 dB @ 10 MHz
Excellent DC Precision
3 mV max Input Offset Voltage
Flexible Operation
Specified for ؎5 V and ؎15 V Operation
؎2.3 V Output Swing into a 75 Load (VS = ؎5 V)
APPLICATIONS
Video Crosspoint Switchers, Multimedia Broadcast
Systems
HDTV Compatible Systems
Video Line Drivers, Distribution Amplifiers
ADC/DAC Buffers
DC Restoration Circuits
Medical—Ultrasound, PET, Gamma and Counter
Applications
PRODUCT DESCRIPTION
The AD811 is a wideband current-feedback operational ampli-
fier, optimized for broadcast quality video systems. The –3 dB
bandwidth of 120 MHz at a gain of +2 and differential gain and
phase of 0.01% and 0.01° (RL = 150 ) make the AD811 an
excellent choice for all video systems. The AD811 is designed to
meet a stringent 0.1 dB gain flatness specification to a band-
width of 35 MHz (G = +2) in addition to the low differential
gain and phase errors. This performance is achieved whether
driving one or two back terminated 75 cables, with a low
power supply current of 16.5 mA. Furthermore, the AD811 is
specified over a power supply range of ± 4.5 V to ± 18 V.
0.10 0.20
0.09
0.08
0.07
0.06
RF = 649
FC = 3.58MHz
100 IRE
MODULATED RAMP
RL = 150
0.18
0.16
0.14
0.12
0.05 0.10
0.04 PHASE
0.08
0.03 0.06
0.02 GAIN
0.04
0.01 0.02
REV. D
56
7 8 9 10 11 12 13 14 15
SUPPLY VOLTAGE – ؎Volts
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
CONNECTION DIAGRAMS
8-Lead Plastic (N-8)
20-Lead LCC (E-20A) Package
Cerdip (Q-8)
SOIC (SO-8) Packages
3 2 1 20 19
NC 1
–IN 2
+IN 3
–VS 4
AD811
8 NC
7 +V S
6 OUTPUT
5 NC
NC = NO CONNECT
NC 4
NC 5
–IN 6
NC 7
+IN 8
AD811
18 NC
17 NC
16 +VS
15 NC
14 OUTPUT
9 10 11 12 13
NC = NO CONNECT
16-Lead SOIC (R-16) Package 20-Lead SOIC (R-20) Package
NC 1
NC 2
–IN 3
NC 4
+IN 5
NC 6
–VS 7
NC 8
AD811
16 NC
15 NC
14 +V S
13 NC
12 OUTPUT
11 NC
10 NC
9 NC
NC = NO CONNECT
NC 1
NC 2
NC 3
–IN 4
NC 5
+IN 6
NC 7
–VS 8
NC 9
NC 10
AD811
20 NC
19 NC
18 NC
17 +V S
16 NC
15 OUTPUT
14 NC
13 NC
12 NC
11 NC
NC = NO CONNECT
The AD811 is also excellent for pulsed applications where tran-
sient response is critical. It can achieve a maximum slew rate of
greater than 2500 V/µs with a settling time of less than 25 ns to
0.1% on a 2 volt step and 65 ns to 0.01% on a 10 volt step.
The AD811 is ideal as an ADC or DAC buffer in data acquisi-
tion systems due to its low distortion up to 10 MHz and its wide
unity gain bandwidth. Because the AD811 is a current feedback
amplifier, this bandwidth can be maintained over a wide range
of gains. The AD811 also offers low voltage and current noise of
1.9 nV/Hz and 20 pA/Hz, respectively, and excellent dc accu-
racy for wide dynamic range applications.
12
G = +2
9 RL = 150
RG = RFB
VS = ؎15V
6
3
VS = ؎ 5V
0
–3
–6
1M
10 M
FREQUENCY – Hz
100 M
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999
Page 1

AD811–SPECIFICATIONS (@ TA = +25؇C and VS = ؎15 V dc, RLOAD = 150 unless otherwise noted)
Model
DYNAMIC PERFORMANCE
Small Signal Bandwidth (No Peaking)
–3 dB
G = +1
G = +2
G = +2
G = +10
0.1 dB Flat
G = +2
Full Power Bandwidth3
Slew Rate
Settling Time to 0.1%
Settling Time to 0.01%
Settling Time to 0.1%
Rise Time, Fall Time
Differential Gain
Differential Phase
THD @ fC = 10 MHz
Third Order Intercept4
INPUT OFFSET VOLTAGE
Offset Voltage Drift
INPUT BIAS CURRENT
–Input
+Input
TRANSRESISTANCE
COMMON-MODE REJECTION
VOS (vs. Common Mode)
TMIN to TMAX
TMIN to TMAX
Input Current (vs. Common Mode)
POWER SUPPLY REJECTION
VOS
+Input Current
–Input Current
INPUT VOLTAGE NOISE
INPUT CURRENT NOISE
OUTPUT CHARACTERISTICS
Voltage Swing, Useful Operating Range5
Output Current
Short-Circuit Current
Output Resistance
INPUT CHARACTERISTICS
+Input Resistance
–Input Resistance
Input Capacitance
Common-Mode Voltage Range
POWER SUPPLY
Operating Range
Quiescent Current
TRANSISTOR COUNT
Conditions
AD811J/A1
AD811S2
VS Min Typ Max Min Typ Max
RFB = 562
RFB = 649
RFB = 562
RFB = 511
RFB = 562
RFB = 649
VOUT = 20 V p-p
VOUT = 4 V p-p
VOUT = 20 V p-p
10 V Step, AV = –1
2 V Step, AV = –1
RFB = 649, AV = +2
f = 3.58 MHz
f = 3.58 MHz
VOUT = 2 V p-p, AV = +2
@ fC = 10 MHz
TMIN to TMAX
± 15 V
± 15 V
±5 V
± 15 V
±5 V
± 15 V
± 15 V
±5 V
± 15 V
± 15 V
±5 V
± 15 V
± 15 V
± 15 V
± 15 V
±5 V
± 15 V
± 5 V, ± 15 V
140
120
80
100
25
35
40
400
2500
50
65
25
3.5
0.01
0.01
–74
36
43
0.5
5
3
5
TMIN to TMAX
TMIN to TMAX
TMIN to TMAX
VOUT = ± 10 V
RL =
RL = 200
VOUT = ± 2.5 V
RL = 150
± 5 V, ± 15 V
± 5 V, ± 15 V
25
15
2 10
20
± 15 V
± 15 V
±5 V
0.75 1.5
0.5 0.75
0.25 0.4
140
120
80
100
25
35
40
400
2500
50
65
25
3.5
0.01
0.01
–74
36
43
0.5
5
3
5
25
30
2 10
25
0.75 1.5
0.5 0.75
0.125 0.4
VCM = ± 2.5
VCM = ± 10 V
TMIN to TMAX
VS = ± 4.5 V to ± 18 V
TMIN to TMAX
TMIN to TMAX
TMIN to TMAX
f = 1 kHz
f = 1 kHz
TJ = +25°C
(Open Loop @ 5 MHz)
±5 V
± 15 V
±5 V
± 15 V
+Input
# of Transistors
±5 V
± 15 V
±5 V
± 15 V
56
60
60
± 4.5
60
66
13
70
0.3 2
0.4 2
1.9
20
± 2.9
± 12
100
150
9
1.5
14
7.5
±3
± 13
± 18
14.5 16.0
16.5 18.0
40
50 60
56 66
1
3
60 70
0.3
0.4
1.9
20
2
2
± 2.9
± 12
100
150
9
1.5
14
7.5
±3
± 13
± 4.5
14.5
16.5
40
± 18
16.0
18.0
NOTES
1The AD811JR is specified with ± 5 V power supplies only, with operation up to ± 12 volts.
2See Analog Devices’ military data sheet for 883B tested specifications.
3FPBW = slew rate/(2 π VPEAK).
4Output power level, tested at a closed loop gain of two.
5Useful operating range is defined as the output voltage at which linearity begins to degrade.
Specifications subject to change without notice.
Units
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/µs
V/µs
ns
ns
ns
ns
%
Degree
dBc
dBm
dBm
mV
mV
µV/°C
µA
µA
µA
µA
M
M
M
dB
dB
µA/V
dB
µA/V
µA/V
nV/Hz
pA/Hz
V
V
mA
mA
M
pF
V
V
V
mA
mA
–2– REV. D
Page 2

ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
AD811JR Grade Only . . . . . . . . . . . . . . . . . . . . . . . . . ± 12 V
Internal Power Dissipation2 . . . . . . . . Observe Derating Curves
Output Short Circuit Duration . . . . . Observe Derating Curves
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . .± 6 V
Storage Temperature Range (Q, E) . . . . . . . . –65°C to +150°C
Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C
Operating Temperature Range
AD811J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
AD811A . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
AD811S . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
28-Lead Plastic Package: θJA = 90°C/W
8-Lead Cerdip Package: θJA = 110°C/W
8-Lead SOIC Package: θJA = 155°C/W
16-Lead SOIC Package: θJA = 85°C/W
20-Lead SOIC Package: θJA = 80°C/W
20-Lead LCC Package: θJA = 70°C/W
ORDERING GUIDE
Model
Temperature
Range
Package
Option*
AD811AN
AD811AR-16
AD811AR-20
AD811JR
AD811SQ/883B
5962-9313101MPA
AD811SE/883B
5962-9313101M2A
AD811JR-REEL
AD811JR-REEL7
AD811AR-16-REEL
AD811AR-16-REEL7
AD811AR-20-REEL
AD811ACHIPS
AD811SCHIPS
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
–55°C to +125°C
–55°C to +125°C
–55°C to +125°C
–55°C to +125°C
0°C to +70°C
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
N-8
R-16
R-20
SO-8
Q-8
Q-8
E-20A
E-20A
SO-8
SO-8
R-16
R-16
R-20
Die
Die
*E = Ceramic Leadless Chip Carrier; N = Plastic DIP; Q = Cerdip; SO (R) =
Small Outline IC (SOIC).
AD811
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD811 is limited by the associated rise in junction temperature.
For the plastic packages, the maximum safe junction tempera-
ture is +145°C. For the cerdip and LCC packages, the maxi-
mum junction temperature is +175°C. If these maximums are
exceeded momentarily, proper circuit operation will be restored
as soon as the die temperature is reduced. Leaving the device in
the “overheated” condition for an extended period can result in
device burnout. To ensure proper operation, it is important to
observe the derating curves in Figures 17 and 18.
While the AD811 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature is not exceeded under all conditions. One important
example is when the amplifier is driving a reverse terminated
75 cable and the cable’s far end is shorted to a power supply.
With power supplies of ± 12 volts (or less) at an ambient tem-
perature of +25°C or less, if the cable is shorted to a supply rail,
then the amplifier will not be destroyed, even if this condition
persists for an extended period.
ESD SUSCEPTIBILITY
ESD (electrostatic discharge) sensitive device. Electrostatic
charges as high as 4000 volts, which readily accumulate on the
human body and on test equipment, can discharge without
detection. Although the AD811 features proprietary ESD pro-
tection circuitry, permanent damage may still occur on these
devices if they are subjected to high energy electrostatic dis-
charges. Therefore, proper ESD precautions are recommended
to avoid any performance degradation or loss of functionality.
METALIZATION PHOTOGRAPH
Contact Factory for Latest Dimensions.
Dimensions Shown in Inches and (mm).
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD811 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. D
–3–
Page 3

AD811–Typical Performance Characteristics
20
TA = +25؇C
15
20
15
10 10
55
TA = +25؇C
NO LOAD
RL = 150
0
0 5 10 15 20
SUPPLY VOLTAGE – ؎Volts
Figure 1. Input Common-Mode Voltage Range vs. Supply
0
0 5 10 15 20
SUPPLY VOLTAGE – ؎ Volts
Figure 4. Output Voltage Swing vs. Supply
35
30
VS = ؎15V
25
20
15
VS = ؎5V
10
5
0
10 100
1k 10k
LOAD RESISTANCE –
Figure 2. Output Voltage Swing vs. Resistive Load
21
18
15 VS = ؎15V
12
VS = ؎5V
9
6
3
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE – ؇C
Figure 5. Quiescent Supply Current vs. Junction
Temperature
10
NONINVERTING INPUT
؎5 TO ؎15V
0
VS = ؎5V
INVERTING
INPUT
–10
–20 VS = ؎15V
–30
–60 –40
–20 0 20 40 60 80 100
JUNCTION TEMPERATURE – ؇C
120 140
Figure 3. Input Bias Current vs. Junction Temperature
10
8
6 VS = ؎5V
4
2
0
–2
–4 VS = ؎15V
–6
–8
–10
–60 –40 –20 0
20 40 60 80 100 120 140
JUNCTION TEMPERATURE – ؇C
Figure 6. Input Offset Voltage vs. Junction Temperature
–4– REV. D
Page 4
Part Number AD811
Manufactur Analog Devices
Description High Performance Video Op Amp
Total Page 15 Pages
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