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Advanced Power Electronics
Advanced Power Electronics

9971GD Datasheet

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9971GD Datasheet Preview


Advanced Power
Electronics Corp.
AP9971GD
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Fast Switching Speed
PDIP-8 Package
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
60V
50mΩ
5A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
60
+25
5
3.2
20
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200809223
Page 1

AP9971GD
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=2.5A
Gate Threshold Voltage
Forward Transconductance
VDS=VGS, ID=250uA
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=60V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V
Gate-Source Leakage
VGS=+25V
Total Gate Charge2
ID=5A
Gate-Source Charge
VDS=48V
Gate-Drain ("Miller") Charge
VGS=10V
Turn-on Delay Time2
VDS=30V
Rise Time
ID=5A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=6Ω
VGS=0V
VDS=25V
f=1.0MHz
60 - - V
- 0.06 - V/
- - 50 m
- - 60 m
1 - 3V
-7-S
- - 1 uA
- - 25 uA
- - +100 nA
- 32.5 - nC
- 4.9 - nC
- 8.8 - nC
- 9.6 - ns
- 10 - ns
- 30 - ns
- 5.5 -
- 1560 -
ns
pF
- 156 -
- 110 -
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 29.2 -
ns
- 48 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3. Mounted on 1 in2 copper pad of FR4 board ;90/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Page 2

35
T A =25 o C
30
25
10V
6.0V
4.5V
20
15
10
V G =3.0V
5
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
52
I D =5A
48 T A =25 o C
44
40
36
32
3579
V GS , Gate-to-Source Voltage (V)
11
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0.1
0.3 0.5 0.7 0.9 1.1 1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP9971GD
35
30 T A =150 o C
25
10V
6.0V
4.5V
20
15
V G =3.0V
10
5
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =5A
1.6 V G =10V
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
150
2
1.6
1.2
0.8
0.4
-50
0
50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
Page 3

AP9971GD
14
I D =5A
12
V DS =48V
10 V DS =38V
V DS =30V
8
6
4
2
0
0 5 10 15 20 25 30 35 40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
1 10ms
100ms
0.1 1s
T A =25 o C
Single Pulse
0.01
0.1
1
10
DC
100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
f=1.0MHz
10000
C iss
1000
C oss
C100
rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty foctor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
VG
10V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4
Page 4
Part Number 9971GD
Manufactur Advanced Power Electronics
Description Search -----> AP9971GD
Total Page 5 Pages
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9971GD datasheet
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9971GD datasheet
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