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Fairchild Semiconductor
Fairchild Semiconductor

5Q0765RT Datasheet

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KA5Q-SERIES
KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/
KA5Q1565RF
Fairchild Power Switch(FPS)
Features
• Quasi Resonant Converter Controller
• Internal Burst Mode Controller for Stand-by Mode
• Pulse by Pulse Current Limiting
• Over Current Latch Protection
• Over Voltage Protection (Vsync: Min. 11V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or RCC switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, and weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost-effective design in quasi
resonant converter as C-TV power supply.
TO-220F-5L TO-3PF-5L
Internal Block Diagram
11
1. Drain 2. GND 3. VCC 4. FB 5. Sync
VCC DRAIN
31
SYNC 5
FEEDBACK 4
Burst Mode
3.5V/1.25V
Normal Mode
4.6V/2.6V
VREF
Ifb
+
- 32V +-1%
11V on
12V off
-
+
-
+
+ OSC
-
2.5R
R
-
+
Internal
BIAS
VREF
S QB
R
LEB
450ns
+
-
UVLO
15V/9V
RnRoon
Rof
fRoff
7.5V
Sync
12V
Idelay 1V
+
- OLP
+
- OVP
+
-
Power
on
Reset
SQ
R
Offset
Delay
80ns
+
-
OCL
Rsense
1V
QS
R Power on Reset
(VCC=6.5V)
Thermal
Shut Down
2 SOURCE
©2003 Fairchild Semiconductor Corporation
Rev.1.0.3
Page 1

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KA5Q-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5Q0765RT
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(3)(Energy (2))
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Thermal Resistance
KA5Q12656RT
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy (2))
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Thermal Resistance
Symbol
VDGR
VGS
IDM
ID
ID
IAS(EAS)
VCC,MAX
VFB
VSync
PD
Derating
TJ
TA
TSTG
Rthjc
VDGR
VGS
IDM
ID
ID
IAS(EAS)
VCC,MAX
VFB
VSync
PD
Derating
TJ
TA
TSTG
Rthjc
Value
650
±30
28
7.0
5.6
20(570)
40
-0.3 to VCC
-0.3 to 13
47
0.37
+160
-25 to +85
-55 to +150
2.7
650
±30
48
12
8.4
30(950)
40
-0.3 to VCC
-0.3 to13
55
0.4
+160
-25 to +85
-55 to +150
2.5
Unit
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
°C/W
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
°C/W
Absolute Maximum Ratings (Continued)
2
Page 2

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(Ta=25°C, unless otherwise specified)
Characteristic
KA5Q1265RF
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy (2))
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Thermal Resistance
Symbol
VDGR
VGS
IDM
ID
ID
IAS(EAS)
VCC,MAX
VFB
VSync
PD
Derating
TJ
TA
TSTG
Rthjc
KA5Q1565RF
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy (2))
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Thermal Resistance
VDGR
VGS
IDM
ID
ID
IAS(EAS)
VCC,MAX
VFB
VSync
PD
Derating
TJ
TA
TSTG
Rthjc
Note:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, VDD =50V, RG = 27, starting Tj = 25°C
3. L = 13uH, starting Tj = 25°C
Value
650
±30
48
12
8.4
33(950)
40
-0.3 to VCC
-0.3 to 13
95
0.76
+160
-25 to +85
-55 to +150
1.31
650
±30
60
15
12.0
36(1050)
40
-0.3 to VCC
-0.3 to 13
98
0.78
+160
-25 to +85
-55 to +150
1.28
KA5Q-SERIES
Unit
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
°C/W
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
°C/W
3
Page 3

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KA5Q-SERIES
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
KA5Q0765RT
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5Q12656RT/KA5Q1265RF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Symbol
Conditions
Min. Typ. Max. Unit
BVDSS VGS=0V, ID=50µA
650 -
-
IDSS
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=85°C
-
-
- 200
- 300
RDS(on) VGS=10V, ID=4.0A
- 1.3 1.6
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f = 1MHz
- 1110 -
- 105 -
- 50 -
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
- 25 -
- 55 -
- 80 -
- 50 -
Qg
VGS=10V, ID=7.0A,
VDS=0.5BVDSS(MOSFET
Qgs Switching time are
Essentially independent of
Qgd Operating temperature)
- 57 74
- 9.3 -
- 29.3 -
V
µA
µA
pF
nS
nC
BVDSS VGS=0V, ID=50µA
650 -
-
IDSS
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=85°C
-
-
- 200
- 300
RDS(on) VGS=10V, ID=6A
- 0.7 0.9
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f = 1MHz
- 1820 -
- 185 -
- 32 -
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
- 38 -
- 120 -
- 200 -
- 100 -
Qg
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
- 60 78
Qgs Switching time are
- 10 -
Essentially independent of
Qgd Operating temperature)
- 30 -
V
µA
µA
pF
nS
nC
4
Page 4
Part Number 5Q0765RT
Manufactur Fairchild Semiconductor
Description Search -----> KA5Q0765RT
Total Page 16 Pages
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