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Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

5082-2300 Datasheet

Schottky Barrier Diodes for General Purpose Applications


5082-2300 Datasheet Preview


Schottky Barrier Diodes for
General Purpose Applications
Technical Data
1N5711
1N5712
5082-2300 Series
5082-2800 Series
5082-2900
Features
• Low Turn-On Voltage
As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
Up to 70 V
• Matched Characteristics
Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
patented “guard ring” design to
achieve a high breakdown
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
The 5082-2300 Series and
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
Outline 15
0.41 (.016)
0.36 (.014)
1.93 (.076)
1.73 (.068)
CATHODE
25.4 (1.00)
MIN.
4.32 (.170)
3.81 (.150)
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2303, -2900 .................................................................-60°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C
5082-2835 ............................................................................ -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at TCASE = 25°C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. VBR
Page 1

2
Package Characteristics
Outline 15
Lead Material ........................................................................................ Dumet
Lead Finish .............................................................................. 95-5% Tin-Lead
Max. Soldering Temperature ................................................ 260°C for 5 sec
Min. Lead Strength .................................................................... 4 pounds pull
Typical Package Inductance
1N5711, 1N5712: ................................................................................ 2.0 nH
2800 Series: ........................................................................................ 2.0 nH
2300 Series, 2900: .............................................................................. 3.0 nH
Typical Package Capacitance
1N5711, 1N5712: ................................................................................ 0.2 pF
2800 Series: ........................................................................................ 0.2 pF
2300 Series, 2900: ............................................................................ 0.07 pF
The leads on the Outline 15 package should be restricted so that the
bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel
specification is patterned after RS-296-D.
Electrical Specifications at TA = 25°C
General Purpose Diodes
Part
Number
5082-2800
Package
Outline
15
Min.
Breakdown
Voltage
VBR (V)
70
Max.
Forward
Voltage
VF (mV)
410
VF = 1 V Max.
at Forward
Current
IF (mA)
15
Max.
Reverse Leakage
Current
IR (nA) at VR (V)
200 50
Max.
Capaci-
tance
CT (pF)
2.0
1N5711
15
70 410
15
200 50
2.0
5082-2810
15
20 410
35
100 15
1.2
1N5712
15
20 550
35
150 16
1.2
5082-2811
15
15 410
20
100 8
1.2
5082-2835
15
8* 340
10*
100 1
1.0
Test
Conditions
IR = 10 µA
*IR = 100 µA
IF = 1 mA
*VF = 0.45 V
VR = 0 V
f =1.0 MHz
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835
which is measured at 20 mA.
Page 2

3
Low 1/f (Flicker) Noise Diodes
Part
Number
5082-
2303
Package
Outline
15
Min.
Breakdown
Voltage
VBR (V)
20
2900
15
10
Test
Conditions
IR = 10 µA
Max.
Forward
Voltage
VF (mV)
400
400
IF = 1 mA
VF = 1 V Max.
at Forward
Current
IF (mA)
35
20
Max.
Reverse Leakage
Current
IR (nA) at VR (V)
500 15
100 5
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA.
Max.
Capaci-
tance
CT (pF)
1.0
1.2
VR = 0 V
f =1.0 MHz
Matched Pairs and Quads
Basic
Part Number
5082-
Matched
Pair
Unconnected
2900
Matched
Quad
Unconnected
Batch
Matched[1]
Test Conditions
VF at IF = 1.0, 10 mA
2800
2811
5082-2804
VF = 20 mV
5082-2805
VF = 20 mV
2835
Note:
1. Batch matched devices have a minimum batch size of 50 devices.
5082-2826
VF = 10 mV
CO = 0.1 pF
5082-2080
VF = 10 mV
CO = 0.1 pF
VF at IF = 0.5, 5 mA
*IF = 10 mA
CO at f = 1.0 MHz
VF at IF = 10 mA
CO at f = 1.0 MHz
VF at IF =10 mA
CO at f = 1.0 MHz
SPICE Parameters
Parameter Units 5082-2800
BV V 75
CJ0 pF 1.6
EG eV 0.69
IBV A 10E - 5
IS A 2.2 x 10E - 9
N 1.08
RS 25
PB V 0.6
PT 2
M 0.5
5082-2810
25
0.8
0.69
10E - 5
1.1 x 10E - 9
1.08
10
0.6
2
0.5
5082-2811
18
1.0
0.69
10E -5
0.3 x 10E - 8
1.08
10
0.6
2
0.5
5082-2835
9
0.7
0.69
10E - 5
2.2 x 10E - 8
1.08
5
0.56
2
0.5
5082-2303
25
0.7
0.69
10E - 5
7 x 1.0E-9
1.08
10
0.64
2
0.5
5082-2900
10
1.1
0.69
10E - 5
10E - 8
1.08
15
0.64
2
0.5
Page 3
Part Number 5082-2300
Manufactur Agilent(Hewlett-Packard)
Description Schottky Barrier Diodes for General Purpose Applications
Total Page 6 Pages
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