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Estek Electronics
Estek Electronics

4N60 Datasheet

600Volts N-Channel MOSFET


4N60 Datasheet Preview


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4 Amps600Volts
N-Channel MOSFET
Description
The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
Features
RDS(ON) =2.50Ω@VGS = 10 V
Low gate charge ( typical 16nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
Symbol
4N60
Absolute Maximum Ratings(Tc=25,unless otherwise specified)
Parameter
Symbol
TO-220
Ratings
TO-220F
TO-252
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet
Continuous
Tc=25
Tc=100
VDSS
VGSS
ID
600
±30
4.0 4.0
2.4 2.4
2.8
1.8
Drain Current Pulsed
(Note 1)
IDP
16 1611.2
Avalanche Energy
Repetitive
Single Pulse
(Note 1)
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Total Power Dissipation
Tc=25
Derate above 25
EAR
EAS
dv/dt
PD
10.4
180
4.5
104 34
0.83 0.27
4.9
210
49
0.39
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
1 BEIJING ESTEK ELECTRONICS CO.,LTD
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4N60
Junction Temperature
Storage Temperature
Drain current limited by maximum junction temperature.
TJ
TSTG
+150
-55~+150
Thermal Characteristics
Parameter
Symbol
Thermal Resistance Junction-Ambient
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case
RthJA
RthCS
RthJC
Ratings
TO-220 TO-220F
62.5
0.5 --
1.2 3.65
TO-252
50(110)
--
2.56
Units
/W
Electrical CharacteristicsTJ=25,unless Otherwise specified.
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250µA
Zero Gate Voltage Drain Current
IDSS
VDS=600V,VGS=0V
VDS=480V,TC=125
Gate-Body Leakage
Current
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
IGSS
BVDSS/TJ
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
ID=250µA
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VDS=10V,
ID=2.0A(TO220,TO220F)
ID=1.4A(TO252)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
CISS
COSS
CRSS
VDS=25V,VGS=0V,
f=1MHZ
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward
Voltage
Continuous Drain-Source Current
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VSD
ISD
VDD=300V,
ID=4.0A(TO220,TO220F)
ID=2.8A(TO252)
RG=25Ω
(Note 4, 5)
VDS=480V,
ID=4.0A(TO220,TO220F)
ID=2.8A(TO252)
VGS=10V
(Note 4, 5)
VGS=0V
ISD=4.0A(TO220,TO220F)
ISD=2.8A(TO252)
TO-220,TO-220F
TO-252
Pulsed Drain-Source Current
TO-220,TO-220F
ISM
TO-252
Reverse Recovery Time
Reverse Recovery Charge
tRR ISD=4.0A,
dISD/dt=100A/µs
QRR
(Note 4)
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.0 A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300μs, Duty cycle2%
5. Essentially independent of operating temperature
Min
600
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
0.7
--
2.0
560
55
7
10
40
40
50
16
2.5
6.5
--
--
--
--
--
300
2.0
Max Units
--
1
10
100
-100
--
V
µA
µA
nA
nA
V/
4.0 V
2.5 Ω
-- pF
-- pF
-- pF
-- ns
-- ns
-- ns
-- ns
-- nC
-- nC
-- nC
1.4 V
4.0
A
2.8
16.0
A
11.2
-- ns
-- µC
2 BEIJING ESTEK ELECTRONICS CO.,LTD
Page 2

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Typical Characteristics
4N60
3 BEIJING ESTEK ELECTRONICS CO.,LTD
Page 3
Part Number 4N60
Manufactur Estek Electronics
Description 600Volts N-Channel MOSFET
Total Page 5 Pages
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