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Fairchild Semiconductor
Fairchild Semiconductor

40N60A4D Datasheet

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Data Sheet
HGT1N40N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N40N60A4D
SOT-227
40N60A4D
NOTE: When ordering, use the entire part number.
Features
• 100kHz Operation At 390V, 22A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
E
Packaging
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/
Page 1

HGT1N40N60A4D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Noted
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage, Any Terminal To Case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .VISOL
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
HGT1N40N60A4D
600
110
45
300
±20
±30
200A at 600V
298
2.3
2500
-55 to 150
1.5
1.7
UNITS
V
A
A
A
V
V
W
W/oC
V
oC
N-m
N-m
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Diode Forward Voltage
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
VEC
IC = 250µA, VGE = 0V
VCE = BVCES
TJ = 25oC
TJ = 125oC
IC = 40A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 2.2Ω, VGE = 15V
L = 100µH, VCE = 600V
IC = 40A, VCE = 0.5 BVCES
IC = 40A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 40A
VCE = 0.65 BVCES
VGE =15V
RG = 2.2
L = 200µH
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG= 2.2
L = 200µH
Test Circuit (Figure 24)
IEC = 40A
MIN TYP MAX UNITS
600 - - V
- - 250 µA
- - 3.0 mA
- 1.7 2.7
V
- 1.5 2.0
V
4.5 5.6
7
V
-
-
±250
nA
200 - - A
- 8.5
-
V
- 350 405 nC
- 450 520 nC
- 25
-
ns
- 18
-
ns
- 145
-
ns
- 35
-
ns
- 400
-
µJ
- 850
-
µJ
- 370
-
µJ
- 27
-
ns
- 20
-
ns
- 185 225 ns
- 55 95 ns
- 400
-
µJ
- 1220 1400 µJ
- 660 775 µJ
- 2.25 2.7
V
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/
Page 2

HGT1N40N60A4D
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
trr
RθJC
IEC = 40A, dIEC/dt = 200A/µs
IGBT
Diode
- 48 55 ns
-
-
0.42
oC/W
- - 1.8 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
Typical Performance Curves (Unless Otherwise Specified)
120
VGE = 15V
100 TJ = 150oC
80
60
40
20
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
225
TJ = 150oC, RG = 2.2, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
300
TC VGE
75oC 15V
12
VCE = 390V, RG = 2.2, TJ = 125oC
1200
10 1000
100 ISC
8 800
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.42oC/W, SEE NOTES
10
1
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
6 600
tSC
4 400
2 200
10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/
Page 3
Part Number 40N60A4D
Manufactur Fairchild Semiconductor
Description Search -----> HGT1N40N60A4D
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