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Toshiba Semiconductor
Toshiba Semiconductor

2SK3857TK Datasheet

Silicon N-Channel Junction Type


2SK3857TK Datasheet Preview


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2SK3857TK
For ECM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3857TK
Application for Ultra-compact ECM
Unit: mm
1.2±0.05
0.8±0.05
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Gate-Drain voltage
Gate Current
Drain power dissipation (Ta = 25°C)
Junction Temperature
Storage temperature range
Symbol
VGDO
IG
PD
Tj
Tstg
Rating
-20
10
100
125
55~125
Unit
V
mA
mW
°C
°C
IDSS CLASSIFICATION
A-Rank 140~240µA
B-Rank 210~350µA
1
3
2
TESM3
1.Drain
2.Source
3.Gate
JEDEC
-
JEITA
-
TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
Marking
9
Type Name
IDSS Classification Symbol
A :A-Rank
B :B-Rank
Equivalent Circuit
D
G
S
1 2007-01-08
Page 1

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Electrical Characteristics (Ta=25°C)
2SK3857TK
Characteristic
Symbol
Test Condition
Min Typ. Max
Drain Current
IDSS VDS = 2 V, VGS = 0
140 350
Drain Current
ID VDD = 2 V, RL= 2.2k,Cg = 5pF
⎯ ⎯ 370
Gate-Source Cut-off Voltage VGS(OFF) VDS = 2 V, ID = 1µA
-0.1 -1.0
Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V
0.9 1.3
Gate-Drain Voltage
V(BR)GDO IG=-10µA
-20
Input capacitance
Ciss VDS = 2 V, VGS = 0, f = 1 MHz
3.5
Voltage Gain
Gv VDD = 2V, RL= 2.2k,Cg = 5pF, f = 1kHz,vin=100mV
-3.0 -0.5
Delta Voltage Gain
DGv(f) VDD = 2V, RL= 2.2k,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV 0 -1
Delta Voltage Gain
DGv(V) VDD = 2V to 1.5V, RL= 2.2k,Cg = 5pF,f = 1kHz, vin=100mV -0.8 -2
Noise Voltage
VN VDD = 2V, RL= 1k,Cg = 10pF,Gv=80dB, A-Curve Filter
25 55
Total Harmonic Distortion
THD VDD = 2V, RL= 2.2k,Cg = 5pF, f = 1kHz, vin=50mV
0.7
Time Output Stability
tos VDD = 2V, RL= 2.2k,Cg = 5pF
100 200
Unit
µA
µA
V
mS
V
pF
dB
dB
dB
mV
%
ms
Time Output Stability Test Method
a) TEST CIRCUIT
VDD=2.0V
Vout
b) TEST SIGNAL
VDD
2V
0V
Vout
VDD-ID*RL
0V
50%
90%
tos
2 2007-01-08
Page 2

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ID – VGS
600
VDS=2V
Common Source
500 Ta = 25 °C
400
300
IDSS=330μA
200
100
0
-1.0
IDSS=150μA
-0.8 -0.6 -0.4 -0.2
Gate - Source voltage VGS (V)
0
ID – VDS
600
Common Source
Ta = 25 °C
500
400
300
200
100
0
0
IDSS=170μA
+ 0.1 V
+ 0.05 V
VGS = 0 V
– 0.05 V
– 0.1 V
1.0
Drain - Source voltage VDS (V)
2.0
|Yfs| – IDSS
3
2
1 |Yfs|:VDS=2V
VGS=0V
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25 °C
0
100 200 300 400 500 600
Drain Current IDSS (µA)
2SK3857TK
ID – VGS
600
VDS=2V
Common Source
500
400
Ta=85
300
Ta=25
200
Ta=-40
100
0
-1.0 -0.8 -0.6 -0.4 -0.2
Gate - Source voltage VGS (V)
0
ID – VDS
600
Common Source
Ta = 25 °C
IDSS=330μA
500
+ 0.1 V
400 + 0.05 V
300 VGS = 0 V
– 0.05 V
200 – 0.1 V
100
0
0 1.0 2.0
Drain - Source voltage VDS (V)
VGS(OFF) – IDSS
-500
-400
-300
-200
-100
0
0
VGS(OFF):VDS=2V
ID = 1µA
IDSS:VDS=2V
VGS=0V
Common Source
Ta = 25 °C
100 200 300 400 500 600
Drain Current IDSS (µA)
3 2007-01-08
Page 3
Part Number 2SK3857TK
Manufactur Toshiba Semiconductor
Description Silicon N-Channel Junction Type
Total Page 5 Pages
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