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Sanyo Semicon Device
Sanyo Semicon Device

2SK3850 Datasheet

General-Purpose Switching Device Applications


2SK3850 Datasheet Preview


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Ordering number : ENN8193
2SK3850
2SK3850
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Best suited for motor drive.
Low ON-resistance.
Low Qg.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking :K3850
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=600V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.35A
VGS=10V, ID=0.35A
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Ratings
600
±30
0.7
2.8
1.0
15
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
600
2.5
280
Ratings
typ
max
Unit
V
100 µA
±100 nA
3.5 V
560 mS
14 18.5
96 pF
29 pF
16 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005PB TS IM TA-101202 No.8193-1/4
Page 1

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Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2083B
2SK3850
Symbol
td(on)
tr
td(off)
tf
Qg
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=0.7A
IS=0.7A, VGS=0
Package Dimensions
unit : mm
2092B
6.5
5.0 2.3
4 0.5
6.5
5.0
4
Ratings
min typ max
Unit
9 ns
11 ns
16 ns
50 ns
4 nC
0.89
1.2 V
2.3
0.5
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5 1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=1µs
D.C.0.5%
G
VDD=200V
ID=0.35A
RL=571
D VOUT
2SK3850
P.G
RGS
50
S
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
No.8193-2/4
Page 2

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2SK3850
ID -- VDS
0.50
0.45 5V
0.40 6V
0.35
0.30
0.25
0.20
0.15 VGS=4V
0.10
0.05
0
0 1 2 3 4 5 6 7 8 9 10
Drain-to-Source Voltage, VDS -- V IT08302
RDS(on) -- VGS
30
Tc=25°C
ID=0.35A
25
20
15
10
0.50
VDS=10V
0.45
ID -- VGS
75°C
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
01234567
Gate-to-Source Voltage, VGS -- V IT08303
RDS(on) -- Tc
30
25
20
15
I D=0.35A, V GS=10V
10
5
5
2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS -- V IT09151
1.0 yfs-- ID
VDS=10V
7
5 25°C
3
2
Tc= --257°C5°C
0.1
7
5
3
0.01
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
0.01
23
5 7 0.1
23
Drain Current, ID -- A
SW Time -- ID
5 7 1.0
IT08306
VDD=200V
VGS=10V
tf
td (off)
tr
td(on)
23
5 7 0.1
23
Drain Current, ID -- A
5 7 1.0
IT09154
0
--60 --40 --20
1.0
7 VGS=0
5
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT09152
IF -- VSD
3
2
0.1
7
5
3
2
0.01
0.4
3
2
100
7
5
3
2
0.5 0.6 0.7 0.8 0.9 1.0
Diode Forward Voltage, VSD -- V IT09153
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
10
7
5
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT08309
No.8193-3/4
Page 3

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2SK3850
10
VDS=200V
9 ID=0.25A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Total Gate Charge, Qg -- nC
PD -- Ta
1.2
3.5 4.0
IT08310
Forward Bias A S O
5
3 IDP=2.8A
<10µs
2
1.0 ID=0.7A
7
5
3
2
0.1
100µs
DC
1001m0sm1sms
operation
7 Operation in this
5 area is limited by RDS(on).
3
2 Tc=25°C
Single pulse
0.01
1.0 2 3 5 7 10 2 3 5 7 100 2 3
Drain-to-Source Voltage, VDS -- V
PD -- Tc
20
5 7 1000
IT09138
1.0
15
0.8
0.6 10
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09139
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT09140
Note on usage : Since the 2SK3850 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject
to change without notice.
PS No.8193-4/4
Page 4
Part Number 2SK3850
Manufactur Sanyo Semicon Device
Description General-Purpose Switching Device Applications
Total Page 4 Pages
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