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Fuji Electric
Fuji Electric

2SK3613-01 Datasheet

N-CHANNEL SILICON POWER MOSFET


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2SK3613-01
FUJI POWER MOSFET
Super FAP-G Series
200304
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOS FET
OOUuT VtIElWine Drawiinnggss ((mmmm))
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250 V
Continuous drain current
Pulsed drain current
VDSX *5
ID Tc=25°C
Ta=25°C
ID(puls]
220
±14
±2.2 **
±56
V
A
A
A
Gate-source voltage
VGS
Non-repetitive Avalanche current IAS *2
±30 V
14 A
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
EAS *1
dVDS/dt *4
129.1
20
mJ
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Tc=25°C
Ta=25°C
5
105
2.4 **
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
*1 L=1.11mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 250V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
MARKING
Fig.1
Fig.1
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
Special
specification
for customer
CON1N1ECGGTI:O:GNGaatete D
22 SS11: :SSoouurcrcee11
Lot No.
33 SS22: :SSoouurcrcee22
4G4 DD: :DDrarainin
Type name
S1
S2
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=5A VGS=10V
ID=5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=5A
VGS=10V
RGS=10
VCC=125V
ID=10A
VGS=10V
L=1.11mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
250
3.0
5
14
Typ. Max. Units
V
5.0 V
25 µA
250
10 100
nA
200 260
10
m
S
785 1178
pF
88 132
46
12 18 ns
2.7 4.1
22 33
7.4 11.1
21 31.5 nC
8 12
5 7.5
A
1.10 1.65 V
0.155
µs
1.05 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a) **
Test Conditions
channel to case
channel to ambient
channel to ambient
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/denshi/scd
Min. Typ.
Max. Units
1.191 °C/W
87.0 °C/W
52.0 °C/W
1
Page 1

2SK3613-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
150
125
100
75
50
25
0
0 25 50 75 100 125 150
Tc [°C]
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=48V
350 AS
I =6A
AS
300
250
I =9A
AS
200
150 I =14A
AS
100
50
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
5
Surface mounted on
1000mm2,t=1.6mm FR-4 PCB
4 (Drain pad area : 500mm 2)
3
2
1
0
0 25 50 75 100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
30
20V 10V
25 8V
7.5V
7.0V
20
15 6.5V
10
6.0V
5
VGS=5.5V
0
0 2 4 6 8 10 12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10 10
11
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
0.1
0.1
1 10
ID [A]
100
2
Page 2

2SK3613-01
FUJI POWER MOSFET
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
0.6
VGS=
5.5V
6.0V
6.5V
0.5
7.0V
7.5V
0.4 8V
10V
20V
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
ID [A]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 µA
7.0
6.5
6.0
5.5
5.0 max.
4.5
4.0
3.5
3.0 min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Ciss
10-1
10-2
10-3
10-1
100 101
VDS [V]
Coss
Crss
102
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
800
700
600
500
400
max.
300
200 typ.
100
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A, Tch=25°C
14
12
10
8
Vcc= 125V
6
4
2
0
0 10 20 30 40
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
3
Page 3

2SK3613-01
FUJI POWER MOSFET
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10
103
102 tf
td(on)
101
td(off)
tr
100
10-1
100 101
ID [A]
102
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
100
90
80
70
60
50
40
30
20
10
0
0
1000
2000
3000
4000
5000
Drain Pad Area [mm 2]
Maximum Avalanche Current vs Pulse width
I =f(t ):starting
102 AV
AV
Tch=25°C,Vcc=48V
Single Pulse
101
100
10-1
10-2
10-8
10-7
10-6
10-5
10-4
10-3
t [sec]
AV
Maximum Transient Thermal Impedance
101 Zth(ch-c)=f(t):D=0
10-2
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
Page 4
Part Number 2SK3613-01
Manufactur Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Total Page 4 Pages
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