2SK3554 Datasheet

N-CHANNEL SILICON POWER MOSFET

2SK3554-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250 V
VDSX *5
220 V
Continuous drain current
ID
±25 A
Pulsed drain current
ID(puls]
±100
A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
25 A
Maximum Avalanche Energy
EAS *1
372 mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.02
135
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=0.67mH, Vcc=48V *2 Tch<=150°C *3 IF<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C
*4 VDS=<250V *5 VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=12.5A VGS=10V
Tch=25°C
Tch=125°C
ID=12.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=72V ID=12.5A
VGS=10V
RGS=10 Ω
VCC=72V
ID=12A
VGS=10V
L=100µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
250
3.0
V
5.0 V
25 µA
250
10 100
nA
75 100
mΩ
8 16
2000 3000
S
pF
220 330
15 30
20 30 ns
30 45
60 90
20 30
44 66 nC
14 21
16 24
25 A
1.10
1.65 V
0.45
µs
1.5 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.926 °C/W
62.0 °C/W
1
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2SK3554-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
200
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.25
VGS=
0.20 5.5V 6.0V
0.15
0.10
6.5V 7.0V
7.5V
8V
10V
20V
0.05
0.00
0
20 40 60 80 100
ID [A]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
100
20V
80 10V
8V
7.5V
60
7.0V
40
6.5V
20 6.0V
VGS=5.5V
0
0 2 4 6 8 10 12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1 10
ID [A]
100
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
270
240
210
180
150
max.
120
90 typ.
60
30
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
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2SK3554-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
7.0
6.5
6.0
5.5
5.0 max.
4.5
4.0
3.5
3.0 min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
101 C=f(VDS):VGS=0V,f=1MHz
100
10-1
Ciss
Coss
10-2
10-1
100 101
VDS [V]
Crss
102
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
103
tf
102
tr
td(on)
101
td(off)
Typical Gate Charge Characteristics
VGS=f(Qg):ID=25A, Tch=25°C
14
12
Vcc= 36V
10 72V
96V
8
6
4
2
0
0 10 20 30 40 50 60
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
100
10-1
100 101
ID [A]
102
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