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Toshiba
Toshiba

2SK3497 Datasheet

High Power Amplifier Application


2SK3497 Datasheet Preview


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2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
High breakdown voltage: VDSS = 180V
Complementary to 2SJ618
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
180
Gatesource voltage
VGSS
±12
Drain current
DC (Note )
Pulse (Note )
ID
IDP
10
30
Drain power dissipation (Tc = 25°C)
PD
130
Channel temperature
Tch 150
Storage temperature range
Tstg 55~150
Note: Ensure that the channel temperature does not exceed 150°C.
V
V
A
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
Rth (chc)
Rth (cha)
Max
0.96
50
Unit
°C / W
°C / W
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
2
1
3
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1 2004-07-01
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource saturation voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
VDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±12 V, VDS = 0 V
VDS = 180V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 7 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 30 V, VGS = 0 V, f = 1 MHz
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
2SK3497
Min Typ. Max Unit
— — 10
— — 100
180 —
1.1 — 2.1
— — 0.75
6.0 12.0 —
— 2400 —
— 220 —
— 30 —
µA
µA
V
V
V
S
pF
TOSHIBA
K3497
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
DataSheet4 U .com
2 2004-07-01
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2SK3497
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
DataSheet4 U .com
3 2004-07-01
Page 3
Part Number 2SK3497
Manufactur Toshiba
Description High Power Amplifier Application
Total Page 3 Pages
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