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Fuji Electric
Fuji Electric

2SK3216-01 Datasheet

N-CHANNEL SILICON POWER MOS-FET


2SK3216-01 Datasheet Preview


2SK3216-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOS-FET
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation Ta=25°C
Tc=25°C
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
PD
Tch
Tstg
Rating
100
±50
±200
±30
464
1.67
135
+150
-55 to +150
Unit
V
A
A
V
mJ
W
W
°C
°C
*1 L=298µH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=100V
VGS=0V
VGS=±30V VDS=0V
ID=25A VGS=10V
ID=25A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=48V ID=50A
VGS=10V
RGS=10
Tch=25°C
Tch=125°C
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
100
2.5 3.0
3.5
1 100
0.1 0.5
10 100
V
V
µA
mA
nA
20 25
16.0 32.0
m
S
3200 4800
760 1140
pF
230 345
23 35
130 195
110 165
65 100
ns
50 A
0.97
1.46 V
150 ns
0.80
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.93 °C/W
75.0 °C/W
1
Page 1

2SK3216-01
Characteristics
Power Dissipation
PD=f(Tc)
150
125
100
75
50
25
0
0 25 50 75 100 125 150
Tc [°C]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
125
VGS=20V
15V
10V
7.0V
100
6.5V
75
6.0V
50
5.5V
25 5.0V
4.5V
0
01234
VDS [V]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
102
5
101
100
10-1 10-1
100 101
ID [A]
102
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):Single Pulse(D=0),Tc=25°C
103
t=
1µs
102 10µs
D.C.
100µs
101
100
10-1
10-1
t
t
D=
T
T
100 101
VDS [V]
1ms
10ms
100ms
102
103
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
02468
VGS [V]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
0.08
VGS=
0.07
4.5V
5.0V
5.5V
6.0V
10
0.06
0.05
0.04
0.03
0.02
6.5V
7.0V
10V
15V
20V
0.01
0.00
0
20 40 60 80 100 120
ID [A]
2
Page 2

2SK3216-01
FUJI POWER MOSFET
Drain-source on-state resistance
RDS(on)=f(Tch):ID=25A,VGS=10V
80
70
60
50
40
max.
30
typ.
20
10
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
100n
10n
Ciss
1n
Coss
Crss
100p
10-2
10-1
100
101
102
VDS [V]
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80µs pulse test,Tch=25°C
100
90
80
70
60
50
40
30
20
10V
10
5V VGS=0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
5.0
4.5
4.0
3.5
max.
3.0
typ.
2.5
min.
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=50A,Tch=25°C
100
25
90
VDS
80
VGS
20
70
Vcc=80V
60 15
50V
20V
50
40 10
30
20 5
10
0
0 20 40 60 80 100 120 140
Qg [nC]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
104
160
0
103
102
101
10-1
td(off)
tf
tr
td(on)
100
ID [A]
101
102
3
Page 3

2SK3216-01
FUJI POWER MOSFET
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch),Non Repetitive
70
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T
101
60
50
40
30
20
10
0
0
100
D=0.5
0.2
0.1
10-1
0.05
0.02
10-2 0.01
0
t
t
D=
T
T
101-30-6 10-5 10-4 10-3 10-2 10-1
25 50 75 100 125 150
Starting Tch [°C]
t [sec]
100
Maximum Avalanche energy vs. starting Tch
Eas=f(starting Tch):Vcc=24V,AIV<=50A,Non-Repetitive
600
500
400
300
200
100
0
0 25 50 75 100 125 150
Starting Tch [°C]
4
Page 4
Part Number 2SK3216-01
Manufactur Fuji Electric
Description N-CHANNEL SILICON POWER MOS-FET
Total Page 4 Pages
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