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Hitachi Semiconductor
Hitachi Semiconductor

2SK1948 Datasheet

Silicon N-Channel MOS FET


2SK1948 Datasheet Preview


2SK1948
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low Drive Current
No Secondary Breakdown
Suitable for Switching regulator, Motor Control
Outline
TO-3PL
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
Page 1

2SK1948
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
250
±30
50
200
50
200
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
Page 2

2SK1948
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
250
Gate to source breakdown
voltage
V(BR)GSS
±30
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
20
Typ Max
——
——
0.047
±10
250
3.0
0.06
30 —
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
5830
2310
265
70
260
430
190
1.2
450 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A
VGS = 10 V*1
ID = 25 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 25 A
VGS = 10 V
RL = 1.2
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0,
diF / dt = 100 A / µs
3
Page 3

2SK1948
Power vs. Temperature Derating
300
200
100
0 50 100 150
Case Temperature Tc (°C)
Typical Output Characteristics
100 10 V 8 V
Pulse Test
80
6V
60
5.5 V
40
5V
20 4 V
VGS = 3.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
1000
300
100
30
10
3
1
Maximum Safe Operation Area
OpinerlaimtioitendinbDtyhCRis DaSOreP(oapWne) r=ati1o0nm(1Tscm1(0=1s0S21µ5h0s°oµCt)s)
0.3 Ta = 25°C
0.1
1 3 10
30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
40
Pulse Test
VDS = 10 V
30
20 Tc = 25°C
–25°C
10
75°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4
Page 4
Part Number 2SK1948
Manufactur Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Total Page 10 Pages
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2SK1948 datasheet
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