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Toshiba Semiconductor
Toshiba Semiconductor

2SK1829 Datasheet

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)


2SK1829 Datasheet Preview


TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1829
High Speed Switching Applications
Analog Switch Applications
2.5 V gate drive
Low threshold voltage: Vth = 0.5 to 1.5 V
High speed
Enhancement-mode
Small package
Marking
Equivalent Circuit
2SK1829
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
PD
Tch
Tstg
Rating
20
10
50
100
150
55 to 150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Start of commercial production
1991-02
1 2014-03-01
Page 1

Electrical Characteristics (Ta = 25°C)
2SK1829
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) DSS
IDSS
Vth
Yfs
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = 10 V, VDS = 0
ID = 100 μA, VGS = 0
VDS = 20 V, VGS = 0
VDS = 3 V, ID = 0.1 mA
VDS = 3 V, ID = 10 mA
ID = 10 mA, VGS = 2.5 V
VDS = 3 V, VGS = 0, f = 1 MHz
VDS = 3 V, VGS = 0, f = 1 MHz
VDS = 3 V, VGS = 0, f = 1 MHz
VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V
VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V
20
0.5
20
20
5.5
1.6
6.5
0.14
0.14
1
1
1.5
40
μA
V
μA
V
mS
Ω
pF
pF
pF
μs
Switching Time Test Circuit
2 2014-03-01
Page 2

2SK1829
3 2014-03-01
Page 3

2SK1829
4 2014-03-01
Page 4
Part Number 2SK1829
Manufactur Toshiba Semiconductor
Description N CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)
Total Page 5 Pages
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2SK1829 datasheet
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2SK1829 datasheet
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