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Panasonic
Panasonic

2SK1606 Datasheet

Field Effect Transistors


2SK1606 Datasheet Preview


Power F-MOS FETs
2SK1606
Siwliwcwo.DnataNSh-eeCt4hU.aconmnel Power F-MOS FET
s Features
q High avalanche energy capacity
q VGSS: 30V guaranteed
q Low RDS(on), high-speed switching characteristic
s Applications
q High-speed switching (switching power supply)
q For high-frequency power amplification
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS 450 V
Gate to Source voltage
VGSS
±30
V
Drain current
DC
Pulse
ID
IDP
±8 A
±16 A
Avalanche energy capacity
EAS*
130
mJ
Allowable power
dissipation
TC = 25°C
PD
Ta = 25°C
50
W
2
Channel temperature
Storage temperature
* Single pulse
Tch 150 °C
Tstg
55 to +150
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
IDSS
IGSS
VDSS
EAS*
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
* Avalanche energy capacity test circuit
VDS = 360V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
L = 4.1mH, ID = 8A, VDD = 50V
VDS = 25V, ID = 1mA
VGS = 10V, ID = 4A
VDS = 25V, ID = 4A
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 4A
VDD = 150V, RL = 37.5
PVS
L
ID
Gate
RGS
VDS
Drain
Source
C VDD
10.0±0.2
5.5±0.2
unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.5 +0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
123
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
min typ max Unit
0.1 mA
±1 µA
450 V
130 mJ
1 5V
0.56 0.75
35
S
1300
pF
160 pF
70 pF
70 ns
50 ns
150 ns
1
Page 1

Power F-MOS FETs
ID VDS
16
www.DataSheet4U.com TC=25˚C
14
VGS=8V
12
7V
10
8
6V
6
5.5V
4
2
5V
PD=50W
0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
ID VGS
16
VDS=25V
14 TC=25˚C
12
10
8
6
4
2
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
PD Ta
80
(1) TC=Ta
70 (2) Without heat sink
(PD=2.0W)
60
50
40
(1)
30
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
| Yfs | ID
10
VDS=25V
TC=25˚C
8
6
4
2
0
0 4 8 12 16 20 24
Drain current ID (A)
Ciss, Coss, Crss VDS
10000
TC=25˚C
3000
1000
Ciss
300
100
Coss
Crss
30
10
0 40 80 120 160 200 240
Drain to source voltage VDS (V)
Area of safe operation (ASO)
100
30
IDP
10 ID
Non repetitive pulse
TC=25˚C
t=1ms
3
DC
1
0.3
10ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
2SK1606
RDS(on) ID
1.2
TC=25˚C
1.0
0.8
VGS=10V
15V
0.6
0.4
0.2
0
0 4 8 12 16 20 24
Drain current ID (A)
ton, tf, td(off) ID
600
VDD=150V
VGS=10V
500 TC=25˚C
400
300
200
100
0
0
td(off)
ton
tf
2 4 6 8 10
Drain current ID (A)
12
EAS Tj
240
ID=8A
VDD=50V
200
160
120
80
40
0
25 50 75 100 125 150 175
Junction temperature Tj (˚C)
2
Page 2
Part Number 2SK1606
Manufactur Panasonic
Description Field Effect Transistors
Total Page 2 Pages
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2SK1606 datasheet
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