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SavantIC
SavantIC

2SD2222 Datasheet

SILICON POWER TRANSISTOR


2SD2222 Datasheet Preview


SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PL package
www.dat·aCshoemet4pule.cmoment to type 2SB1470
·High DC current gain
·Low saturation voltage VCE(sat)
·DARLINGTON
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SD2222
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
160
160
5
8
15
120
3.5
150
-55~150
UNIT
V
V
V
A
A
W
Page 1

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2222
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=7mA
ICBO Collector cut-off current
VCB=160V; IE=0
ICEO Collector cut-off current
VCE=160V; IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=7A ;IB1=-IB2=7mA
VCC=50V
MIN TYP. MAX UNIT
160 V
3.0 V
3.0 V
100 µA
100 µA
100 µA
1000
3500
20000
20 MHz
2.0 µs
6.0 µs
1.2 µs
hFE-2 classifications
QP
3500-10000 7000-20000
2
Page 2

SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
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Product Specification
2SD2222
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Page 3
Part Number 2SD2222
Manufactur SavantIC
Description SILICON POWER TRANSISTOR
Total Page 3 Pages
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