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Panasonic Semiconductor
Panasonic Semiconductor

2SD2222 Datasheet

Silicon NPN triple diffusion planar type Darlington(For power amplification)


2SD2222 Datasheet Preview


Power Transistors
2SD2222
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1470
s Features
q Optimum for 120W HiFi output
q High foward current transfer ratio hFE
q Low collector to emitter saturation voltage VCE(sat)
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
160
160
5
15
8
150
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2.0±0.3
3.0±0.3
1.0±0.2
1.5
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 160V, IE = 0
VCE = 160V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 7mA
IC = 7A, IB = 7mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 7mA, IB2 = –7mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 3500 to 10000 7000 to 20000
E
min typ max Unit
100 µA
100 µA
100 µA
160 V
10000
3500
20000
3V
3V
20 MHz
2 µs
6 µs
1.2 µs
1
Page 1

Power Transistors
200
180
160 (1)
140
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
120
100
80
60
40
20 (2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=1000
30
10
3
TC=–25˚C
25˚C
1
125˚C
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Collector current IC (A)
100
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=1000 (–IB1=IB2)
VCC=50V
10 TC=25˚C
tstg
3
ton
1
tf
0.3
0.1
0.03
0.01
0
2 4 6 8 10 12
Collector current IC (A)
IC — VCE
10
TC=25˚C
9
IB=1.0mA
8
0.9mA
7
0.8mA
6
0.7mA
5
4 0.6mA
3 0.5mA
2 0.4mA
1
0.3mA
0
0 2 4 6 8 10 12 14 16
Collector to emitter voltage VCE (V)
hFE — IC
105
VCE=5V
104
TC=125˚C
103
25˚C
102
–25˚C
2SD2222
VCE(sat) — IC
100
IC/IB=1000
30
10
3
1
TC=–25˚C
25˚C
125˚C
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Collector current IC (A)
100
Cob — VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
10
0.03 0.1 0.3 1 3 10
Collector current IC (A)
30
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
ICP
10 IC
t=1ms
10ms
3 DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
2
Page 2

Power Transistors
Rth(t) — t
104
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
103
102
(1)
10 (2)
0
10–1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SD2222
3
Page 3
Part Number 2SD2222
Manufactur Panasonic Semiconductor
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)
Total Page 3 Pages
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