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Toshiba Semiconductor
Toshiba Semiconductor

2SD2088 Datasheet

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE/ HAMMER DRIVE/ SWITCHING/ POWER AMPLIFIER APPLICATIONS)


2SD2088 Datasheet Preview


2SD2088
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2088
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60 ± 10
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO 8 V
Collector current
IC 2 A
Base current
IB
0.5 A
JEDEC
TO-92MOD
Collector power dissipation
PC
0.9 W
JEITA
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1 2009-12-21
Page 1

Electrical Characteristics (Ta = 25°C)
2SD2088
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Unclamped inductive load energy
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
ES/B
VCB = 45 V, IE = 0
VEB = 8 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 A(pulse)
IC = 1 A, IB = 1 mA (pulse)
IC = 1 A, IB = 1 mA (pulse)
VCE = 2 V, IC = 0.5 A (pulse)
VCB = 10 V, IE = 0, f = 1 MHz
L = 10 mH, IC = 1.3 A, IB = ±50 mA
Min Typ. Max Unit
50
2000
8.4
60
100
20
10 μA
4 mA
70 V
1.5 V
2.0 V
MHz
pF
mJ
Turn-on time
Switching time Storage time
Fall time
ton
20 μs
Input IB1
Output
0.4
tstg IB2
VCC = 30 V
tf IB1 = 1 mA,IB2 = 1 mA
duty cycle 1%
4.0
μs
0.6
Marking
D2088
Part No. (or abbreviation code)
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21
Page 2

2.0
500
250
1.6
IC – VCE
200 185
Common emitter
Ta = 25°C
180
1.2
175
0.8
IB = 170 μA
0.4
PC = 0.9 W
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 1000
1 Ta = 55°C
25
100
0.6
0.3
0.5
1
Collector current IC (A)
3
2SD2088
10000
5000
3000
Common emitter
VCE = 2 V
hFE – IC
1000
500
300
Ta = 100°C
55
25
100
50
30
0.01
0.03 0.1 0.3
1
Collector current IC (A)
35
IC – VBE
2.0
Common emitter
VCE = 2 V
1.6
1.2
Ta = 100°C
0.8
0.4
55
25
0
0 0.8 1.6 2.4 3.2 4.0
Base-emitter voltage VBE (V)
VBE (sat) – IC
5 Common emitter
IC/IB = 1000
3
Ta = 55°C
25
100
1
0.3
0.5
1
Collector current IC (A)
3
PC – Ta
2.0
1.5
1.0
0.5
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
3 2009-12-21
Page 3

Safe Operating Area
5
3 IC max (pulsed)*
IC max (continuous)
10 ms*
100 μs*
1
0.5 DC operation
Ta = 25°C
0.3
1 ms*
0.1
*: Single nonrepetitive pulse
0.05 Ta = 25°C
0.03 Curves must be derated
linearly with increase in
temperature.
0.01
0.1
0.3
1
3
VCEO max
10 30 50 100
Collector-emitter voltage VCE (V)
2SD2088
4 2009-12-21
Page 4
Part Number 2SD2088
Manufactur Toshiba Semiconductor
Description NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE/ HAMMER DRIVE/ SWITCHING/ POWER AMPLIFIER APPLICATIONS)
Total Page 5 Pages
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