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Toshiba Semiconductor
Toshiba Semiconductor

2SD2088 Datasheet

Silicon NPN Epitaxial Type TRANSISTOR


2SD2088 Datasheet Preview


2SD2088
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2088
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60 ± 10
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO 8 V
Collector current
IC 2 A
Base current
IB
0.5 A
JEDEC
TO-92MOD
Collector power dissipation
PC
0.9 W
JEITA
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1 2009-12-21
Page 1

Electrical Characteristics (Ta = 25°C)
2SD2088
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Unclamped inductive load energy
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
ES/B
VCB = 45 V, IE = 0
VEB = 8 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 A(pulse)
IC = 1 A, IB = 1 mA (pulse)
IC = 1 A, IB = 1 mA (pulse)
VCE = 2 V, IC = 0.5 A (pulse)
VCB = 10 V, IE = 0, f = 1 MHz
L = 10 mH, IC = 1.3 A, IB = ±50 mA
Min Typ. Max Unit
50
2000
8.4
60
100
20
10 μA
4 mA
70 V
1.5 V
2.0 V
MHz
pF
mJ
Turn-on time
Switching time Storage time
Fall time
ton
20 μs
Input IB1
Output
0.4
tstg IB2
VCC = 30 V
tf IB1 = 1 mA,IB2 = 1 mA
duty cycle 1%
4.0
μs
0.6
Marking
D2088
Part No. (or abbreviation code)
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21
Page 2

2.0
500
250
1.6
IC – VCE
200 185
Common emitter
Ta = 25°C
180
1.2
175
0.8
IB = 170 μA
0.4
PC = 0.9 W
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 1000
1 Ta = 55°C
25
100
0.6
0.3
0.5
1
Collector current IC (A)
3
2SD2088
10000
5000
3000
Common emitter
VCE = 2 V
hFE – IC
1000
500
300
Ta = 100°C
55
25
100
50
30
0.01
0.03 0.1 0.3
1
Collector current IC (A)
35
IC – VBE
2.0
Common emitter
VCE = 2 V
1.6
1.2
Ta = 100°C
0.8
0.4
55
25
0
0 0.8 1.6 2.4 3.2 4.0
Base-emitter voltage VBE (V)
VBE (sat) – IC
5 Common emitter
IC/IB = 1000
3
Ta = 55°C
25
100
1
0.3
0.5
1
Collector current IC (A)
3
PC – Ta
2.0
1.5
1.0
0.5
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
3 2009-12-21
Page 3
Part Number 2SD2088
Manufactur Toshiba Semiconductor
Description Silicon NPN Epitaxial Type TRANSISTOR
Total Page 5 Pages
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