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Toshiba Semiconductor
Toshiba Semiconductor

2SD2012 Datasheet

NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)


2SD2012 Datasheet Preview


TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
60
60
7
3
0.5
2.0
25
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
Note 1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-01
Page 1

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 60 V, IE = 0
VEB = 7 V, IC = 0
IC = 50 mA, IB = 0
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 2 A
IC = 2 A, IB = 0.2 A
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Marking
2SD2012
Min Typ. Max Unit
― ― 100 μA
― ― 100 μA
60 ― ―
V
100 320
20 ― ―
0.4 1.0
V
0.75 1.0
V
3 MHz
35 pF
D2012
Part No. (or abbreviation code)
Lot No.
Note 2
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-01
Page 2

3.0
100
90
2.5
2.0
1.5
1.0
IC – VCE
80
70
60
50
40
30
20
IB = 10 mA
0.5 Common emitter
Tc = 25°C
0
01234567
Collector-emitter voltage VCE (V)
2SD2012
1000
500 Tc = 100°C
300 25
25
100
50
30
hFE – IC
Common emitter
VCE = 5 V
10
0.01
0.03 0.05 0.1
0.3 0.5 1
Collector current IC (A)
3
VCE (sat) – IC
Common emitter
1 IC/IB = 10
0.5
0.3
0.1
0.05
0.03
Tc = 100°C
25
25
0.01
0.01
0.03 0.05 0.1
0.3 0.5 1
Collector current IC (A)
35
30
(1)
25
PC – Ta
(1) Ta = Tc Infinite heat sink
(2) No heat sink
20
15
10
5
(2)
0
0 25 50 75 100 125 150 175
Ambient temperature Ta (°C)
IC – VBE
3.0
Common emitter
2.5 VCE = 5 V
2.0
1.5
1.0 Tc = 100°C 25 25
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Safe Operating Area
10
IC max (pulsed)*
5
3 IC max (continuous)
1 ms*
DC operation
Tc = 25°C
1
10 ms*
100 ms*
0.5
*: Single nonrepetitive pulse
0.3 Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VCEO max
0.1
1
3 5 10
30 50 100
300
Collector-emitter voltage VCE (V)
3 2009-12-01
Page 3

rth – tw
100
Curves apply only to limited areas of thermal
50 resistance. Single nonrepetitive pulse
30 (1) No heat sink Ta = 25°C
(2) infinite heat sink Tc = 25°C
10
5
3
1
0.5
0.3
0.001
0.01
0.1 1
Pulse width tw (s)
2SD2012
(1)
(2)
10 100
4 2009-12-01
Page 4
Part Number 2SD2012
Manufactur Toshiba Semiconductor
Description NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
Total Page 5 Pages
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