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Toshiba Semiconductor
Toshiba Semiconductor

2SC5200 Datasheet

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)


2SC5200 Datasheet Preview


TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SA1943
Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
230
230
5
15
1.5
150
150
55 to 150
Electrical Characteristics (Tc = 25°C)
http://www.DataSheet4U.net/
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 230 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 7 A
IC = 8 A, IB = 0.8 A
VCE = 5 V, IC = 7 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Min Typ. Max Unit
― ― 5.0 µA
― ― 5.0 µA
230
V
55 160
35 60
0.4 3.0
V
1.0 1.5
V
30 MHz
200
pF
1 2004-07-07
datasheet pdf - http://www.DataSheet4U.net/
Page 1

Marking
TOSHIBA
2SC5200
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC5200
http://www.DataSheet4U.net/
2 2004-07-07
datasheet pdf - http://www.DataSheet4U.net/
Page 2

IC – VCE
20
Common emitter
Tc = 25°C
16 800
600
400
300
12 250
200
150
8 100
IB = 10 mA 50
4 40
30
20
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC5200
IC – VBE
20
Common emitter
VCE = 5 V
16
12
8 Tc = 100°C
4
25
25
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
3
1
0.3
0.1 25
0.03
0.01
0.01
Tc = 100°C
25
Common emitter
IC/IB = 10
0.1 1
10 100
Collector current IC (A)
Safe Operating Area
50
30 IC max (pulsed)*
1 ms*
IC max (continuous)
10 ms*
10
DC operation
Tc = 25°C
5
3 100 ms*
1
0.5
0.3
*: Single nonrepetitive pulse
0.1 Tc = 25°C
Curves must be derated
0.05 linearly with increase in
temperature.
0.03
3
10 30
100
VCEO max
300 1000
Collector-emitter voltage VCE (V)
300
Tc = 100°C
100
25
30 25
10
hFE – IC
http://www.DataSheet4U.net/
3 Common emitter
VCE = 5 V
1
0.01
0.1
1
10
Collector current IC (A)
100
3 2004-07-07
datasheet pdf - http://www.DataSheet4U.net/
Page 3
Part Number 2SC5200
Manufactur Toshiba Semiconductor
Description NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)
Total Page 4 Pages
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