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Toshiba Semiconductor
Toshiba Semiconductor

2SC5200 Datasheet

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)


2SC5200 Datasheet Preview


TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SA1943
Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
230
230
5
15
1.5
150
150
55 to 150
Electrical Characteristics (Tc = 25°C)
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Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 230 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 7 A
IC = 8 A, IB = 0.8 A
VCE = 5 V, IC = 7 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Min Typ. Max Unit
― ― 5.0 µA
― ― 5.0 µA
230
V
55 160
35 60
0.4 3.0
V
1.0 1.5
V
30 MHz
200
pF
1 2004-07-07
datasheet pdf - http://www.DataSheet4U.net/
Page 1

Marking
TOSHIBA
2SC5200
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC5200
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2 2004-07-07
datasheet pdf - http://www.DataSheet4U.net/
Page 2

IC – VCE
20
Common emitter
Tc = 25°C
16 800
600
400
300
12 250
200
150
8 100
IB = 10 mA 50
4 40
30
20
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC5200
IC – VBE
20
Common emitter
VCE = 5 V
16
12
8 Tc = 100°C
4
25
25
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
3
1
0.3
0.1 25
0.03
0.01
0.01
Tc = 100°C
25
Common emitter
IC/IB = 10
0.1 1
10 100
Collector current IC (A)
Safe Operating Area
50
30 IC max (pulsed)*
1 ms*
IC max (continuous)
10 ms*
10
DC operation
Tc = 25°C
5
3 100 ms*
1
0.5
0.3
*: Single nonrepetitive pulse
0.1 Tc = 25°C
Curves must be derated
0.05 linearly with increase in
temperature.
0.03
3
10 30
100
VCEO max
300 1000
Collector-emitter voltage VCE (V)
300
Tc = 100°C
100
25
30 25
10
hFE – IC
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3 Common emitter
VCE = 5 V
1
0.01
0.1
1
10
Collector current IC (A)
100
3 2004-07-07
datasheet pdf - http://www.DataSheet4U.net/
Page 3

2SC5200
RESTRICTIONS ON PRODUCT USE
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The information contained herein is subject to change without notice.
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4 2004-07-07
datasheet pdf - http://www.DataSheet4U.net/
Page 4
Part Number 2SC5200
Manufactur Toshiba Semiconductor
Description NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)
Total Page 4 Pages
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