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Microsemi Corporation
Microsemi Corporation

2N4427 Datasheet

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS


2N4427 Datasheet Preview


140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N4427
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
1 Watt Minimum Power Output @ 175 MHz
500 MHz Current-Gain Bandwidth Product @ 50mA
Power Gain, GPE = 10dB (Min) @ 175 MHz
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Value
20
40
2.0
400
1.0
5.71
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
MSC1301.PDF 10-25-99
Page 1

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCER
BVCEO
ICEO
ICEX
IEBO
(on)
HFE
VCE(sat)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector Cutoff Current
(VCE = 12 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, VBE = -1.5 Vdc)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
DYNAMIC
Symbol
Test Conditions
fT
COB
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
2N4427
Min.
40
20
-
-
-
Value
Typ.
-
-
-
-
-
Max.
-
-
20
100
100
10 - 200
5- -
- - 0.5
Unit
Vdc
Vdc
µA
µA
µA
-
-
Vdc
Min.
500
-
Value
Typ.
-
4.0
Max.
-
-
Unit
MHz
pF
MSC1301.PDF 10-25-99
Page 2

2N4427
FUNCTIONAL
Symbol
Test Conditions
GPE
Pout
ηC
Power Gain
Output Power
Collector Efficiency
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
Min.
10
1.0
45
Value
Typ.
-
-
-
Max.
-
-
-
Unit
dB
Watts
%
3.00
2.50
2.00
1.50
1.00
0.50
0.00
10.0
Motorola "typical"
device performance
Microsemi "typical"
device performance
35.0
60.0
85.0
110.0
135.0
160.0
185.0
210.0
Pin (mWatts)
MSC1301.PDF 10-25-99
Page 3

2N4427
PIN
(RS=50 OHMS)
C1 L1
C2
L2
L3
C3
L4
C4
C5 C6
Vcc = 12V
POUT
(RL=50 OHMS)
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT,
AND EFFICIENCY SPECIFICATIONS.
L1: 2 TURNS No. 16 wire, 3/16” ID, 1/4” long
L3: 2 TURNS No. 16 wire, 1/4” ID, 1/4” long
Capacitor values in pF unless
.
MSC1301.PDF 10-25-99
L2: Ferrite choke, Z=450 ohms
L4: 4 TURNS No. 16 wire, 3/8” ID, 3/8” long
Tuning capacitors are air variable
otherwise indicated.
Page 4
Part Number 2N4427
Manufactur Microsemi Corporation
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Total Page 6 Pages
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