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General Semiconductor
General Semiconductor

2N4401 Datasheet

SMALL SIGNAL TRANSISTORS NPN


2N4401 Datasheet Preview


ADVANCED INFORMATION
ADVANCED INFORMATION
2N4401
SMALL SIGNAL TRANSISTORS (NPN)
TO-92
0.181 (4.6)
0.142 (3.6)
max. Æ 0.022 (0.55)
0.098 (2.5)
EC
B
Dimensions in inches and (millimeters)
FEATURES
¨ NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
¨ As complementary type, the PNP
transistor 2N4403 is recommended.
¨ On special request, this transistor is
also manufactured in the pin
configuration TO-18.
¨ This transistor is also available in the
SOT-23 case with the type designation
MMBT4401
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation at TA=25°C
Derate above 25°C
Power Dissipation at TC=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient Air
Thermal Resistance Junction to Case
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Ptot
RQJA
RQJC
Tj
TS
VALUE
60
40
6.0
600
625
5.0
1.5
12
200
83.3
150
Ð55 to +150
UNIT
Volts
Volts
Volts
mA
mW
mW/°C
W
mW/°C
°C/W
¡C/W
¡C
¡C
2/17/99
Page 1

2N4401
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at IC = 0.1 mA, IE = 0
Collector-Emitter Breakdown Voltage(1)
at IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at IE = 0.1 mA, IC = 0
Collector-Emitter Saturation Voltage(1)
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage(1)
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
Collector Cutoff Current
at VEB = 0.4 V, VCE = 35 V
Base Cutoff Current
at VEB = 0.4 V, VCE = 35 V
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 150 mA(1)
at VCE = 2 V, IC = 500 mA(1)
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
Voltage Feedback Ratio
at VCE = 10 V, IC = 1 mA, f = 1 kHz
Current Gain-Bandwidth Product
at VCE = 10 V, IC = 20 mA, f = 100 MHz
Collector-Base Capacitance
at VCB = 5 V, IE=0, f=1.0 MHZ
Emitter-Base Capacitance
at VEB = 0.5 V, IC=0, f=1.0 MHZ
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VCEsat
VBEsat
VBEsat
ICEX
IBEV
hFE
hFE
hFE
hFE
hFE
hie
hre
fT
CCBO
CEBO
MIN.
60
40
6.0
Ð
Ð
0.75
Ð
Ð
Ð
20
40
80
100
40
1.0
0.1 ¥ 10-4
250
Ð
Ð
NOTES
(1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2%
MAX.
Ð
Ð
Ð
0.40
0.75
0.95
1.20
100
100
Ð
Ð
Ð
300
Ð
15
8 ¥ 10-4
Ð
6.5
30
UNIT
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
Ð
MHz
pF
pF
Page 2

2N4401
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Small Signal Current Gain
at VCE = 10 V, IC = 1 mA, f = 1 kHz
Output Admittance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
Delay Time (see fig. 1)
at IC = 150 mA, IB1 = 15 mA, VCC=30V, VBE=2.0V
Rise Time (see fig. 1)
at IC = 150 mA, IB1 = 15 mA, VCC=30V, VBE=2.0V
Storage Time (see fig. 2)
at IB1 = IB2 = 15 mA, VCC=30V, IC=150mA
Fall Time (see fig. 2)
at IB1 = IB2 = 15 mA, VCC=30V, IC=150mA
SYMBOL
hfe
hoe
td
tr
ts
tf
MIN.
40
1.0
Ð
Ð
Ð
Ð
MAX.
500
30
15
20
225
30
UNIT
Ð
mS
ns
ns
ns
ns
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - TURN-ON TIME
+16 V
0
-2 V
1.0 to 100 ms, DUTY CYCLE Å 2%
< 2 ns
1kW
+30V
200W
CS* < 10 pF
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
+16 V
0
-14 V
FIGURE 2 - TURN-OFF TIME
1.0 to 100 ms, DUTY CYCLE Å 2%
+30V
200W
< 20 ns
1kW
-4 V
CS* < 10 pF
Page 3
Part Number 2N4401
Manufactur General Semiconductor
Description SMALL SIGNAL TRANSISTORS NPN
Total Page 3 Pages
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