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NXP
NXP

2N3904 Datasheet

NPN switching transistor


2N3904 Datasheet Preview


DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N3904
NPN switching transistor
Product specification
Supersedes data of 1997 Jul 15
1999 Apr 23
Page 1

Philips Semiconductors
NPN switching transistor
Product specification
2N3904
FEATURES
Low current (max. 200 mA)
Low voltage (max. 40 V).
APPLICATIONS
High-speed switching.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package. PNP complement: 2N3906.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
handbook, halfpage1
2
3
2
MAM279
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
60
40
6
200
300
100
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 23
2
Page 2

Philips Semiconductors
NPN switching transistor
Product specification
2N3904
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
PARAMETER
CONDITIONS
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = 0; VCB = 30 V
IC = 0; VEB = 6 V
VCE = 1 V; note 1
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 50 mA
IC = 100 mA
IC = 10 mA; IB = 1 mA; note 1
IC = 50 mA; IB = 5 mA; note 1
IC = 10 mA; IB = 1 mA; note 1
IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
IC = 100 µA; VCE = 5 V; RS = 1 k;
f = 10 Hz to 15.7 kHz
MIN.
60
80
100
60
30
300
Switching times (between 10% and 90% levels); see Fig.2
ton turn-on time
td delay time
tr rise time
toff turn-off time
ts storage time
tf fall time
ICon = 10 mA; IBon = 1 mA;
IBoff = 1 mA
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MAX.
50
50
UNIT
nA
nA
300
200 mV
200 mV
850 mV
950 mV
4 pF
8 pF
MHz
5 dB
65 ns
35 ns
35 ns
240 ns
200 ns
50 ns
1999 Apr 23
3
Page 3

Philips Semiconductors
NPN switching transistor
Product specification
2N3904
andbook, full pagewidth
VBB VCC
(probe)
oscilloscope
450
Vi
RB
R2
R1
RC
Vo
(probe)
oscilloscope
450
DUT
MLB826
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf 3 ns.
R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 .
VBB = 1.9 V; VCC = 3 V.
Oscilloscope input impedance Zi = 50 .
Fig.2 Test circuit for switching times.
1999 Apr 23
4
Page 4
Part Number 2N3904
Manufactur NXP
Description NPN switching transistor
Total Page 8 Pages
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