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STMicroelectronics
STMicroelectronics

2N2219AHR Datasheet

Hi-Rel NPN bipolar transistor


2N2219AHR Datasheet Preview


2N2219AHR
Hi-Rel NPN bipolar transistor 40 V, 0.8 A
Features
BVCEO
IC (max)
HFE at 10 V - 150 m
Operating temperature range
40 V
0.8 A
> 100
- 65 °C to + 200 °C
Hi-Rel NPN bipolar transistor
Linear gain characteristics
ESCC qualified
European preferred part list - EPPL
Radiation level: lot specific total dose contact
marketing for specified level
Description
The 2N2219AHR is a silicon planar epitaxial NPN
transistor in a TO-39 package. It is specifically
designed for aerospace Hi-Rel applications, and
ESCC qualified in accordance with the 5201-003
specification. In case of discrepancies between
this datasheet and ESCC detailed specification,
the latter prevails.
Datasheet — production data
TO-39
Figure 1. Internal schematic diagram
www.DataSheet.net/
Table 1. Device summary
Order codes
Package
Lead finish
2N2219AHR
TO-39
Gold
Solder Dip
2N2219AT1
TO-39
Gold
Marking
520100301
520100302
2N2219AT1
Type
ESCC Flight
Engineering
model
EPPL
Yes
Packaging
Strip pack
Strip pack
October 2012
This is information on a product in full production.
Doc ID 15294 Rev 3
1/9
www.st.com
9
Datasheet pdf - http://www.DataSheet4U.co.kr/
Page 1

Electrical ratings
1 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
VCBO
VCEO
VEBO
IC
PTOT
TSTG
TJ
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Total dissipation at Tamb 25°C
Total dissipation at Tc 25°C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJC Thermal resistance junction-case __
RthJA Thermal resistance junction-ambient __
max
max
www.DataSheet.net/
2N2219AHR
Value
75
40
6
0.8
0.8
3
-65 to 200
200
Unit
V
V
V
A
W
W
°C
°C
Value
58
218
Unit
°C/W
°C/W
2/9 Doc ID 15294 Rev 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
Page 2

2N2219AHR
2 Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
ICBO
Collector cut-off
current (IE = 0)
IEBO
Emitter cut-off current
(IC = 0)
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
VBE(sat) (1)
Base-emitter
saturation voltage
hFE (1) DC current gain
hfe
Small signal current
gain
VCB = 60 V
VCB = 60 V, Tamb = 150 °C
VEB = 3 V
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
www.DataSheet.net/
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
Tamb = -55 °C
VCE = 20 V, IC = 20 mA
f = 100 MHz
CCBO
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz f 1 MHz
ton Turn-on time
VCC = 30 V, IC = 150 mA
IB1 = 15 mA
toff Turn-off time
VCC = 30 V, IC = 150 mA
IB1 = -IB2 = 15 mA
1. Pulsed duration = 300 µs, duty cycle 2%
Min. Typ. Max. Unit
10 nA
-
10 µA
- 10 nA
75 -
V
40 -
V
6-
V
0.3 V
-
1V
- 1.2 V
75
100 300
40 -
35
2.5 -
- 8 pF
- 35 ns
- 300 ns
Doc ID 15294 Rev 3
3/9
Datasheet pdf - http://www.DataSheet4U.co.kr/
Page 3
Part Number 2N2219AHR
Manufactur STMicroelectronics
Description Hi-Rel NPN bipolar transistor
Total Page 9 Pages
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