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Comset Semiconductor
Comset Semiconductor

2N2219A Datasheet

(2N221x/A) Switching Silicon Transistors


2N2219A Datasheet Preview


NPN 2N2218 – 2N2218A
2N2219 – 2N2219A
SWITCHING SILICON TRANSISTORS
The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case .
They are designed for high-speed switching applications and feature useful current gain over a
wide range of collector current, low leakage currents and low saturation voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
www.DataSheet.net/
VCEO
VCBO
VEBO
IC
PD
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Tamb = 25°
Tcase= 25°
Storage Temperature range
Value
2N2218
2N2219
30
2N2218
A
2N2219
A
40
60 75
56
800
0.8
3
175
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to ambient in free air
RthJ-c
Thermal Resistance, Junction to case
Value
50
187.5
Unit
V
V
V
mA
W
°C
°C
Unit
°C/W
°C/W
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
Page 1

NPN 2N2218 – 2N2218A
2N2219 – 2N2219A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
IEBO
ICEX
VCEO
VCBO
VEBO
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Cutoff
Current
Collector Emitter
Breakdown
Voltage (*)
Collector Base
Breakdown
Voltage
Emitter Base
Breakdown
Voltage
hFE
DC Current Gain
(*)
Test Condition(s)
VCB= 50 V Tj= 25°C 2N2218-2N2219
IE= 0
Tj= 150°C 2N2218-2N2219
VCB= 60 V Tj= 25°C 2N2218A-2N2219A
IE= 0
Tj= 150°C 2N2218A-2N2219A
VBE= 3.0 V, IC=0
2N2218-2N2219
2N2218A-2N2219A
Min Typ Max
- - 10
- - 10
- - 10
- - 10
- - 10
Unit
nA
µA
nA
µA
nA
VCE= 60 V, -VBE= 3V 2N2218A-2N2219A - - 10 nA
IC= 10 mA, IB= 0
2N2218-2N2219
30 - -
V
2N2218A-2N2219A 40 - -
IC= 10 µA, IE= 0
2N2218-2N2219www.DataSheet.net/
2N2218A-2N2219A
60
75
-
-
-
-
V
IE= 10 µA, IC= 0
2N2218-2N2219
5- -
V
2N2218A-2N2219A 6 - -
IC=0.1 mA, VCE=10 V
IC=1 mA, VCE=10 V
IC=10 mA, VCE=10 V
2N2218-2N2218A
2N2219-2N2219A
2N2218-2N2218A
2N2219-2N2219A
2N2218-2N2218A
2N2219-2N2219A
20 -
35 -
25 -
50 -
35 -
75 -
-
-
-
-
-
-
IC=10 mA, VCE=10 V 2N2218A
Tamb = -55°C
2N2219A
2N2218-2N2218A
IC=150 mA, VCE=1 V 2N2219-2N2219A
2N2218-2N2218A
IC=150 mA, VCE=10 V 2N2219-2N2219A
2N2218
2N2218A
IC=500 mA, VCE=10 V 2N2219
2N2219A
15 -
35 -
20 -
50 -
40 -
100 -
20 -
25
30 -
40
-
-
-
-
120
300
-
-
-
16/10/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
Page 2

NPN 2N2218 – 2N2218A
2N2219 – 2N2219A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCE(SAT)
VCE(SAT)
fT
hfe
td
tr
ts
tf
rb,CC
Ratings
Collector-Emitter
saturation Voltage
(*)
Collector-Emitter
saturation Voltage
(*)
Transition
frequency
Small signal
current gain
Delay time
Rise time
Storage time
Fall time
Feedback time
constant
Test Condition(s)
IC=150 mA, IB=15 mA
IC=500 mA, IB=50 mA
IC=150 mA, IB=15 mA
IC=500 mA, IB=50 mA
IC=20 mA, VCE=20 V
f= 100MHz
www.DataSheet.net/
IC=1 mA, VCE=10 V
f= 1kHz
IC=10 mA, VCE=10 V
f= 1kHz
IC=150 mA, IB =15 mA
-VBB=0.5 V, VCC=30 V
IC=150 mA, IB =15 mA
-VBB=0.5 V, VCC=30 V
IC=150 mA, VCC=30 V
IB1 = -IB2 =15 mA
IC=150 mA, VCC=30 V
IB1 = -IB2 =15 mA
IC=20 mA, VCE=20 V
f= 31.8MHz
2N2218-2N2219
2N2218A-2N2219A
2N2218-2N2219
2N2218A-2N2219A
2N2218-2N2219
2N2218A-2N2219A
2N2218-2N2219
2N2218A-2N2219A
2N2218-2N2218A
2N2219
2N2219A
2N2218A
2N2219A
2N2218A
2N2219A
2N2218A
2N2219A
2N2218A
2N2219A
2N2218A
2N2219A
2N2218A
2N2219A
2N2218A
2N2219A
Min Typ Mx
- - 0.4
- - 0.3
- - 1.6
- -1
- - 1.3
0.6 - 1.2
- - 2.6
- -2
250 - -
300 - -
30 - 150
50 - 300
50 - 300
75 - 375
- - 10
- - 25
- - 225
- - 60
- - 150
Unit
V
V
MHz
-
ns
ns
ns
ns
ps
(*) Pulse conditions : tp < 300 µs, δ =2%
16/10/2012
COMSET SEMICONDUCTORS
3|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
Page 3
Part Number 2N2219A
Manufactur Comset Semiconductor
Description (2N221x/A) Switching Silicon Transistors
Total Page 4 Pages
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