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2N2218A Datasheet

NPN SILICON PLANAR SWITCHING TRANSISTORS


2N2218A Datasheet Preview


NPN SILICON PLANAR SWITCHING TRANSISTORS
Boca Semiconductor Corp.
BSC
2N2218A
2N2219A
TO-39
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2218A,19A
Collector -Emitter Voltage
VCEO
40
Collector -Base Voltage
VCBO
75
Emitter -Base Voltage
VEBO
6.0
Collector Current Continuous
IC
800
Power Dissipation @Ta=25 degC
PD
800
Derate Above 25deg C
4.57
@ Tc=25 degC
PD
3.0
Derate Above 25deg C
17.1
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL TEST CONDITION
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VALUE
MIN MAX
40 -
75 -
6.0 -
- 10
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=60V, IE=0
- 10
ICEX
VCE=60V, VEB=3V
-
10
IEBO
VEB=3V, IC=0
- 10
IBL
VCE=60V, VEB=3V
-
20
VCE(Sat)* IC=150mA,IB=15mA
-
0.3
IC=500mA,IB=50mA
1.0
VBE(Sat) * IC=150mA,IB=15mA
-
0.6-1.2
IC=500mA,IB=50mA
-
2.0
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
UNIT
V
V
V
nA
uA
nA
nA
nA
V
V
V
V
http://www.bocasemi.com
page 1
Page 1

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
hFE IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
2N2218A to 2N2219A
2218A 2219A
>20 >35
>25 >50
>35 >75
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
hfe
Input Impedance
hie
Voltage Feedback Ratio
hre
Out put Admittance
hoe
Collector Base Time Constant
rb'Cc
Real Part Common-Emitter High Frequency
Input Impedance
Noise Figure
Re(hie)
NF
Ta=55 deg C
IC=10mA,VCE=10V
IC=150mA,VCE=10V
IC=150mA,VCE=1V
IC=500mA,VCE=10V
>15
40-120
>20
>25
>35
100-300
>50
>40
ALL f=1kHz
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IE=20mA, VCB=20V
f=31.8MHz
IC=20mA, VCE=20V
f=300MHz
IC=100uA, VCE=10V
Rs=1kohms, f=1kHz
30-150
50-300
1.0-3.5
0.2-1.0
<5.0
<2.5
3.0-15
10-100
<150
50-300
75-375
2.0-8.0
0.25-1.25
<8.0
<4.0
5.0-35
25-200
<150
<60 <60
- <4.0
DYNAMIC CHARACTERISTICS
Transistors Frequency
Out-Put Capacitance
Input Capacitance
ft IC=20mA, VCE=20V >250 >300
f=100MHz
Cob VCB=10V, IE=0
<8.0 <8.0
f=100kHz
Cib VEB=0.5V, IC=0
<25 <25
f=100kHz
SWITCHING Time
Delay time
Rise time
td IC=150mA,IB1=15mA
<10
tr
VCC=30V,VBE=0.5V
-
<25
Storage time
Fall time
ts IC=150mA, IB1=
<225
tf
IB2=15mA, VCC=30V -
<60
*Pulse Condition: Pulse Width=300us, Duty Cycle=2%
UNIT
kohms
x10-4
umhos
ps
ohms
dB
MHz
pF
pF
ns
ns
ns
ns
http://www.bocasemi.com
page 2
Page 2

TO-39 Metal Can Package
A DIM MIN MAX
B A 8.50 9.39
B 7.74 8.50
C 6.09 6.60
D 0.40 0.53
E — 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.86
J 0.73 1.02
K 12.70
L 42 DEG 48 DEG
D
G
2
1
3
LH
J
32 1
PIN CONFIGURATION
1. EMITTER
2. BASE
3. COLLECTOR
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-39
500 pcs/polybag 540 gm/500 pcs
INNER CARTON BOX
Size Qty
3" x 7.5" x 7.5"
20.0K
http://www.bocasemi.com
OUTER CARTON BOX
Size Qty Gr Wt
17" x 15" x 13.5"
32.0K 40 kgs
page 3
Page 3
Part Number 2N2218A
Manufactur Boca
Description NPN SILICON PLANAR SWITCHING TRANSISTORS
Total Page 3 Pages
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