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Infineon Technologies
Infineon Technologies

20N60S5 Datasheet

SPP20N60S5


20N60S5 Datasheet Preview


Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SPP20N60S5
VDS
RDS(on)
ID
600
0.19
20
V
A
PG-TO220
2
P-TO220-3-1
123
Type
SPP20N60S5
Package
PG-TO220
Ordering Code
Q67040-S4751
Marking
20N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
20
13
40
690
1
20
±20
±30
208
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.8
Page 1
2009-12-01
Page 1

SPP20N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 20 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Symbol
dv/dt
Value
20
Unit
V/ns
Symbol
RthJC
RthJA
Tsold
min.
-
Values
typ. max.
- 0.6
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=20A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
I DSS
ID=1000µΑ, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
3.5
-
-
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
VGS=20V, VDS=0V
VGS=10V, ID=13A,
Tj=25°C
Tj=150°C
f=1MHz, open Drain
-
-
-
-
Values
typ. max.
--
700 -
4.5 5.5
0.5 5
- 250
- 100
0.16
0.43
12
0.19
-
-
Unit
V
µA
nA
Rev. 2.8
Page 2
2009-12-01
Page 2

SPP20N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Characteristics
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,3) Co(er)
energy related
Effective output capacitance,4) Co(tr)
time related
VDS2*ID*RDS(on)max,
ID=13A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
-
-
-
-
-
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
tr
t d(off)
tf
VDD=350V, VGS=0/10V,
ID=20A, RG=5.7
-
-
-
-
Values
typ. max.
12 -
3000
1170
28
83
-
-
-
-
160 -
120 -
25 -
140 210
30 45
Unit
S
pF
pF
ns
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=350V, ID=20A
Gate to drain charge
Gate charge total
Qgd
Qg
VDD=350V, ID=20A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=20A
- 21 - nC
- 47 -
- 79 103
- 8 -V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.8
Page 3
2009-12-01
Page 3
Part Number 20N60S5
Manufactur Infineon Technologies
Description SPP20N60S5
Total Page 11 Pages
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