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Infineon Technologies
Infineon Technologies

20N60S5 Datasheet

Search -----> SPP20N60S5


20N60S5 Datasheet Preview


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Preliminary data
SPP20N60S5
SPB20N60S5
Cool MOS™=Power Transistor
=New revolutionary high voltage technology
Worldwide best RDS(on) in TO 220
Ultra low gate charge
=Improved periodic avalanche rating
Extreme dv/dt rated
=Optimized capacitances
=Improved noise immunity
=Former development designation:
SPPx1N60S5/SPBx1N60S5
COOLMOS
Power Semiconductors
Product Summary
VDS @ Tjmax
RDS(on)
ID
650
0.19
20
V
A
P-TO263-3-2
P-TO220-3-1
Type
SPP20N60S5
SPB20N60S5
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4751
Q67040-S4171
Marking
20N60S5
20N60S5
G,1
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
Pulsed drain current 1)
TC=25°C
Avalanche energy, single pulse
ID = 10 A, VDD = 50 V
Avalanche energy (repetitive, limited by Tjmax)
ID = 20 A, VDD = 50 V
Avalanche current (repetitive, limited by Tjmax)
Reverse diode dv/dt
ID
ID puls
EAS
EAR
IAR
dv/dt
IS=20A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
VGS
Ptot
Tj , Tstg
Value
20
13
40
690
1
20
6
±20
208
-55... +150
D,2
S,3
Unit
A
mJ
A
kV/µs
V
W
°C
1 2001-07-25
Page 1

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Preliminary data
SPP20N60S5
SPB20N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
RthJC
RthJA
- - 0.6 K/W
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
- - 62
- 35 -
Static Characteristics, at Tj = 25 °C, unless otherwise specified
Drain-source breakdown voltage
V(BR)DSS 600
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
VGS(th)
3.5
ID = 1 mA, Tj = 25 °C
Zero gate voltage drain current, VDS=VDSS
IDSS
VGS = 0 V, Tj = 25 °C
-
VGS = 0 V, Tj = 150 °C
-
Gate-source leakage current
IGSS
-
VGS = 20 V, VDS = 0 V
Drain-source on-state resistance
RDS(on)
-
VGS = 10 V, ID = 13 A
-
4.5
0.5
-
-
0.16
-V
5.5
µA
25
250
100 nA
0.19
1current limited by Tjmax
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
2 2001-07-25
Page 2

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Preliminary data
SPP20N60S5
SPB20N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
VDS2*ID*RDS(on)max ,
-
12
-S
ID =13A
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V, VDS=25V,
f=1MHz
VDD=350V, VGS=10V,
ID=20A, RG=5.7
- 3000 - pF
- 1170 -
- 28 -
- 120 - ns
- 25 -
- 140 210
- 30 45
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Total gate charge
Qgs
Qgd
Qg
VDD=350V, ID=20A
VDD=350V, ID=20A,
VGS=0 to 10V
- 21 - nC
- 47 -
- 79 103
Reverse Diode
Inverse diode continuous
forward current
IS
Inverse diode direct
current,pulsed
ISM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
Qrr
TC=25°C
VGS=0V, IF=20A
VR=100V, IF=lS,
diF/dt=100A/µs
- - 20 A
- - 40
- 1 1.2 V
- 610 - ns
- 12 - µC
3 2001-07-25
Page 3

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Preliminary data
SPP20N60S5
SPB20N60S5
Power dissipation
Ptot = f (TC)
SPP20N60S5
240
W
Drain current
ID = f (TC)
parameter: VGS10 V
SPP20N60S5
22
A
200
180
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 °C 160
TC
18
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID=f (VDS)
parameter: D=0.01, TC=25°C
10 2 SPP20N60S5
A
tp = 11.0µs
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP20N60S5
K/W
10 0
10 1
10 -1
100 µs
10 -2
D = 0.50
0.20
10 0
1 ms
10 -3
0.10
10 ms
DC
10 -4
single pulse
0.05
0.02
0.01
10
-1
10
0
10 1
10 2 V 10 3
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
VDS
tp
4 2001-07-25
Page 4
Part Number 20N60S5
Manufactur Infineon Technologies
Description Search -----> SPP20N60S5
Total Page 9 Pages
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20N60S5 datasheet
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20N60S5 datasheet
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