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ON Semiconductor
ON Semiconductor

1N6267A Datasheet

1500 Watt MosorbE Zener Transient Voltage Transient Voltage


1N6267A Datasheet Preview


1N6267A Series
1500 Watt MosorbZener
Transient Voltage
Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmeticaxial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Working Peak Reverse Voltage Range – 5.8 V to 214 V
Peak Power – 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Power Dissipation (Note 1)
@ TL 25°C
PPK
1500
Watts
Steady State Power Dissipation
@ TL 75°C, Lead Length = 3/8
Derated above TL = 75°C
Thermal Resistance, Junction–to–Lead
Forward Surge Current (Note 2)
@ TA = 25°C
Operating and Storage
Temperature Range
PD
RqJL
IFSM
TJ, Tstg
5.0 Watts
20 mW/°C
20 °C/W
200 Amps
– 65 to
+175
°C
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
© Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 5
1
http://onsemi.com
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
L
1N6
xxxA
1.5KE
xxxA
YYWW
L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
1.5KExxxA
1.5KExxxARL4
Axial Lead 500 Units/Box
Axial Lead 1500/Tape & Reel
1N6xxxA
Axial Lead 500 Units/Box
1N6xxxARL4* Axial Lead 1500/Tape & Reel
*1N6302A Not Available in 1500/Tape & Reel
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Publication Order Number:
1N6267A/D
Page 1

1N6267A Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
IPP
Uni–Directional TVS
V
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Page 2

1N6267A Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)
Device
JEDEC
Device
(Note 4)
VRWM
(Note 5)
(Volts)
IR @ VRWM
(mA)
Breakdown Voltage
VBR (Note 6) (Volts)
Min Nom Max
@ IT
(mA)
VC @ IPP (Note 7)
VC IPP
(Volts)
(A)
QVBR
(%/°C)
1.5KE6.8A
1.5KE7.5A
1.5KE8.2A
1.5KE9.1A
1N6267A
1N6268A
1N6269A
1N6270A
5.8
6.4
7.02
7.78
1000
500
200
50
6.45 6.8 7.14
7.13 7.5 7.88
7.79 8.2 8.61
8.65 9.1 9.55
10
10
10
1
10.5 143 0.057
11.3 132 0.061
12.1 124 0.065
13.4 112 0.068
1.5KE10A
1.5KE11A
1.5KE12A
1.5KE13A
1N6271A
1N6272A
1N6273A
1N6274A
8.55
9.4
10.2
11.1
10
9.5 10 10.5
1
14.5 103 0.073
5
10.5 11 11.6
1
15.6 96 0.075
5
11.4 12 12.6
1
16.7 90 0.078
5
12.4 13 13.7
1
18.2 82 0.081
1.5KE15A
1.5KE16A
1.5KE18A
1.5KE20A
1N6275A
1N6276A
1N6277A
1N6278A
12.8
13.6
15.3
17.1
5
14.3 15 15.8
1
21.2 71 0.084
5
15.2 16 16.8
1
22.5 67 0.086
5
17.1 18 18.9
1
25.2 59.5 0.088
5 19 20 21 1 27.7 54 0.09
1.5KE22A
1.5KE24A
1.5KE27A
1.5KE30A
1N6279A
1N6280A
1N6281A
1N6282A
18.8
20.5
23.1
25.6
5
20.9 22 23.1
1
30.6 49 0.092
5
22.8 24 25.2
1
33.2 45 0.094
5
25.7 27 28.4
1
37.5 40 0.096
5
28.5 30 31.5
1
41.4 36 0.097
1.5KE33A
1.5KE36A
1.5KE39A
1.5KE43A
1N6283A
1N6284A
1N6285A
1N6286A
28.2
30.8
33.3
36.8
5
31.4 33 34.7
1
45.7 33 0.098
5
34.2 36 37.8
1
49.9 30 0.099
5
37.1 39
41
1
53.9 28
0.1
5
40.9 43 45.2
1
59.3 25.3 0.101
1.5KE47A
1.5KE51A
1.5KE56A
1.5KE62A
1N6287A
1N6288A
1N6289
1N6290A
40.2
43.6
47.8
53
5
44.7 47 49.4
1
64.8 23.2 0.101
5
48.5 51 53.6
1
70.1 21.4 0.102
5
53.2 56 58.8
1
77 19.5 0.103
5
58.9 62 65.1
1
85 17.7 0.104
1.5KE68A
1.5KE75A
1.5KE82A
1.5KE91A
1N6291A
1N6292A
1N6293A
1N6294A
58.1
64.1
70.1
77.8
5
64.6 68 71.4
1
92 16.3 0.104
5
71.3 75 78.8
1
103 14.6 0.105
5
77.9 82 86.1
1
113 13.3 0.105
5
86.5 91 95.5
1
125 12 0.106
1.5KE100A
1.5KE110A
1.5KE120A
1.5KE130A
1N6295A
1N6296A
1N6297A
1N6298A
85.5
94
102
111
5
95 100 105
1
137 11 0.106
5
105 110 116
1
152 9.9 0.107
5
114 120 126
1
165 9.1 0.107
5
124 130 137
1
179 8.4 0.107
1.5KE150A
1.5KE160A
1.5KE170A
1.5KE180A
1N6299A
1N6300A
1N6301A
1N6302A*
128
136
145
154
5
143 150 158
1
207 7.2 0.108
5
152 160 168
1
219 6.8 0.108
5
162 170 179
1
234 6.4 0.108
5
171 180 189
1
246 6.1 0.108
1.5KE200A
1.5KE220A
1.5KE250A
1N6303A
171
185
214
5
190 200 210
1
274 5.5 0.108
5
209 220 231
1
328 4.6 0.109
5
237 250 263
1
344 5 0.109
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
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3
Page 3

1N6267A Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
10
1
0.1Ăms
ms 10Ăms 100Ăms 1 ms 10 ms
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
10,000
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
MEASURED @
ZERO BIAS
1000
MEASURED @ VRWM
100
10,000
1000
100
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
MEASURED @
ZERO BIAS
MEASURED @ VRWM
10 10
1 10 100 1000 1 10 100 1000
VBR, BREAKDOWN VOLTAGE (VOLTS)
VBR, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
3/8
5 3/8
4
3
2
1
0
0 25 50 75 100 125 150 175 200
TL, LEAD TEMPERATURE (°C)
Figure 4. Steady State Power Derating
PULSE WIDTH (tP) IS DEFINED AS
tr THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
100
PEAK VALUE - IPP
tr 10Ăms
HALF VALUE -
IPP
2
50
tP
0
01 2 3 4
t, TIME (ms)
Figure 5. Pulse Waveform
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4
Page 4
Part Number 1N6267A
Manufactur ON Semiconductor
Description 1500 Watt MosorbE Zener Transient Voltage Transient Voltage
Total Page 8 Pages
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