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Fairchild Semiconductor
Fairchild Semiconductor

1N6266 Datasheet

GaAs INFRARED EMITTING DIODE


1N6266 Datasheet Preview


1N6266
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.255 (6.48)
1.00 (25.4)
MIN
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
0.040 (1.02)
0.040 (1.02)
NOTES:
13
45°
Ø0.020 (0.51) 2X
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
DESCRIPTION
• The 1N6266 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
1
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Operating Temperature
*Storage Temperature
*Soldering Temperature (Iron)(3,4,5 and 6)
*Soldering Temperature (Flow)(3,4 and 6)
*Continuous Forward Current
*Forward Current (pw, 1µs; 200Hz)
*Reverse Voltage
*Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
TOPR
TSTG
TSOL-I
TSOL-F
IF
IF
VR
PD
PD
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
*Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
*Reverse Leakage Current
*Radiant Intensity
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
IF = 100 mA
IF = 100 mA
VR = 3 V
IF = 100 mA
SYMBOL
DP
0
VF
IR
Ie
tr
tf
MIN
935
25
TYP MAX
955
±10
1.7
10
——
1.0
1.0
UNITS
nm
Deg.
V
µA
mW/sr
µs
µs
2001 Fairchild Semiconductor Corporation
DS300278 3/12/01
1 OF 7
www.fairchildsemi.com
Page 1

1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
10
8
6
4
2
PULSE WIDTH
= 2 µS
1.0
0.8
0.6
0.4
0.2
0.1
10
100
1000
10,000
f = FREQUENCY - HERTZ
Fig.1 Maximum Pulse Capability
100,000
100
.80
60
40
20
10
8
6
4
2
1.0
.8
.6
.4
.2
.10
.08
.06
.04
.02
.01
.01 .02 .04 .06 .08 .1
Normalized to:
IF = 100 mA
N = .01 Steradians
TA = 25˚C
.2 .4 .6 .8 1.0 2
IF - INPUT CURRENT (A)
Fig.3 Radiant Intensity vs.
Input Current le/l
4 6 8 10
150
125
100
75
100% Duty Cycle
10% Duty
1% Duty
Cycle
Cycle
50
25
0
.01
.02
.04 .06 .08 0.1
.2
.4 .6 .8 1.0 2
4 6 8 10
IF - INPUT CURRENT (mA)
Fig.2 Maximum Temperature vs. Input Current
10.0
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
.08
.06
.04
.02
.01
0 1 2 3 4 5 6 7 8 9 10
VF - FORWARD VOLTAGE (V)
Fig.4 Forward Voltage vs.
Forward Current
www.fairchildsemi.com
2 OF 7
3/12/01 DS300278
Page 2

1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
100
80
60
40
20
10 TA = 100˚C
8
6
4
25˚C
-55˚C
2
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5
VF - FORWARD VOLTAGE (V)
Fig.5 Forward Voltage vs. Forward Current
1.0
0.8
0.6
0.4
0.2
0
880
900 920 940 960 980
D- WAVELENGTH - NANOMETERS
Fig.6 Spectral Output
1000
1020
100
80
60
40
20
10
8
6
4
2
1.0
.8
.6
.4
.2
.10
.08
.06
.04
.02
.01
-50
IF = 1 A
IF = 100 mA
IF = 10 mA
Normalized to:
IF = 100 mA
N = .01 Steradians
TA = 25˚C
Silicon Photodiode
as Detector
-25 0 25 50 75 100 125 150
TA - AMBIENT TEMPERATURE (˚C)
Fig.7 Output vs. Temperature
DS300278 3/12/01
3 OF 7
www.fairchildsemi.com
Page 3
Part Number 1N6266
Manufactur Fairchild Semiconductor
Description GaAs INFRARED EMITTING DIODE
Total Page 7 Pages
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