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Fairchild Semiconductor
Fairchild Semiconductor

1N6266 Datasheet

GaAs INFRARED EMITTING DIODE


1N6266 Datasheet Preview


1N6266
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.255 (6.48)
1.00 (25.4)
MIN
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
0.040 (1.02)
0.040 (1.02)
NOTES:
13
45°
Ø0.020 (0.51) 2X
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
DESCRIPTION
• The 1N6266 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
1
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Operating Temperature
*Storage Temperature
*Soldering Temperature (Iron)(3,4,5 and 6)
*Soldering Temperature (Flow)(3,4 and 6)
*Continuous Forward Current
*Forward Current (pw, 1µs; 200Hz)
*Reverse Voltage
*Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
TOPR
TSTG
TSOL-I
TSOL-F
IF
IF
VR
PD
PD
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
*Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
*Reverse Leakage Current
*Radiant Intensity
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
IF = 100 mA
IF = 100 mA
VR = 3 V
IF = 100 mA
SYMBOL
DP
0
VF
IR
Ie
tr
tf
MIN
935
25
TYP MAX
955
±10
1.7
10
——
1.0
1.0
UNITS
nm
Deg.
V
µA
mW/sr
µs
µs
2001 Fairchild Semiconductor Corporation
DS300278 3/12/01
1 OF 7
www.fairchildsemi.com
Page 1

1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
10
8
6
4
2
PULSE WIDTH
= 2 µS
1.0
0.8
0.6
0.4
0.2
0.1
10
100
1000
10,000
f = FREQUENCY - HERTZ
Fig.1 Maximum Pulse Capability
100,000
100
.80
60
40
20
10
8
6
4
2
1.0
.8
.6
.4
.2
.10
.08
.06
.04
.02
.01
.01 .02 .04 .06 .08 .1
Normalized to:
IF = 100 mA
N = .01 Steradians
TA = 25˚C
.2 .4 .6 .8 1.0 2
IF - INPUT CURRENT (A)
Fig.3 Radiant Intensity vs.
Input Current le/l
4 6 8 10
150
125
100
75
100% Duty Cycle
10% Duty
1% Duty
Cycle
Cycle
50
25
0
.01
.02
.04 .06 .08 0.1
.2
.4 .6 .8 1.0 2
4 6 8 10
IF - INPUT CURRENT (mA)
Fig.2 Maximum Temperature vs. Input Current
10.0
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
.08
.06
.04
.02
.01
0 1 2 3 4 5 6 7 8 9 10
VF - FORWARD VOLTAGE (V)
Fig.4 Forward Voltage vs.
Forward Current
www.fairchildsemi.com
2 OF 7
3/12/01 DS300278
Page 2

1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
100
80
60
40
20
10 TA = 100˚C
8
6
4
25˚C
-55˚C
2
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5
VF - FORWARD VOLTAGE (V)
Fig.5 Forward Voltage vs. Forward Current
1.0
0.8
0.6
0.4
0.2
0
880
900 920 940 960 980
D- WAVELENGTH - NANOMETERS
Fig.6 Spectral Output
1000
1020
100
80
60
40
20
10
8
6
4
2
1.0
.8
.6
.4
.2
.10
.08
.06
.04
.02
.01
-50
IF = 1 A
IF = 100 mA
IF = 10 mA
Normalized to:
IF = 100 mA
N = .01 Steradians
TA = 25˚C
Silicon Photodiode
as Detector
-25 0 25 50 75 100 125 150
TA - AMBIENT TEMPERATURE (˚C)
Fig.7 Output vs. Temperature
DS300278 3/12/01
3 OF 7
www.fairchildsemi.com
Page 3

1N6266
GaAs INFRARED EMITTING DIODE
INFRARED EMITTING DIODE RADIANT INTENSITY
The design of an Infrared Emitting Diode (IRED)-photode-
tector system normally requires the designer to determine
the minimum amount of infrared irradiance received by the
photodetector, which then allows definition of the photode-
tector current. Prior to the introduction of the 1N6266, the
best method of estimating the photodetector received
infrared was to geometrically proportion the piecewise inte-
gration of the typical beam pattern with the specified mini-
mum total power output of the IRED. However, due to
inconsistencies of the IRED integral lenses and the beam
lobes, this procedure will not provide a valid estimation.
The 1N6266 now provides the designer specifications
which precisely define the infrared beam along the devices
mechanical axis. The 1N6266 is a premium device select-
ed to give a minimum radiant intensity of 25 mW/steradian
into the 0.01 steradians referenced by the the devices
mechanical axis and seating plane. Radiant intensity is the
IRED beam power output, within a specified solid angle,
per unit solid angle.
A quick review of geometry indicates that a steradian is a
unit of solid angle, referenced to the center of a sphere,
defined by 4 H times the ratio of the area projected by the
solid angle to the area of the sphere. The solid angle is
equal to the projected area divided by the squared radius.
Steradians = 4 H A/4 H R2 = A/R2 = N
As the projected area has a circular periphery, a geometric
integration will solve to show the relationship of the
Cartesian angle () of the cone, (from the center of the
sphere) to the projected area.
N= 2 H(1 - COS )
2
Radiant intensity provides an easy, accurate tool to calcu-
late the infrared power received by a photodetector locat-
ed on the IRED axis. As the devices are selected for
beam characteristics, the calculated results are valid for
worst case analysis. For many applications a simple
approximation for photodetector irradiance is:
H Ie/d2, in mw/cm2
where d is the distance from the IRED to the detector in
cm.
IRED power output, and therefore Ie, depends on IRED
current. This variation (Ie/I) is documented in Figure 3,
and completes the approximation: H = Ie/d2 (Ie/I). This
normally gives a conservative value of irradiance. For
more accurate results, the effect of precise angle viewed
by the detector must be considered. This is documented
in figure 8 (Ie/N) giving:
H = Ie/d2 (Ie/N) in mw/cm2
For worst case designs, temperature coefficients and tol-
erances must be considered.
The minimum output current of the detector (IL) can be
determined for a given distance (d) of the detector from
the IRED.
IL = (S)H (S) Ie/d2
or
IL = (S)H = (S) (Ie/d2) (Ie/N) (Ie/I)
where S is the sensitivity of the detector in terms of out-
put current per unit irradiance from a GaAs source.
www.fairchildsemi.com
4 OF 7
3/12/01 DS300278
Page 4
Part Number 1N6266
Manufactur Fairchild Semiconductor
Description GaAs INFRARED EMITTING DIODE
Total Page 7 Pages
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