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Diotec Semiconductor
Diotec Semiconductor

1N4007-1300 Datasheet

Silicon Rectifiers


1N4007-1300 Datasheet Preview


Silicon Rectifiers
1N 4001 ... 1N 4007, 1N 4007-1300
EM 513, EM 516, EM 518
Silizium Gleichrichter
Ø 2.6 -0.1
Ø 0.8 ±0.05
Dimensions / Maße in mm
Nominal current – Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
1A
50…2000 V
DO-41
DO-204AL
0.4 g
see page 16
siehe Seite 16
Maximum ratings
Type
Typ
1N 4001
1N 4002
1N 4003
1N 4004
1N 4005
1N 4006
1N 4007
1N 4007-1300
EM 513
EM 516
EM 518
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
1300
1600
1800
2000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
600
800
1000
1300
1600
1800
2000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 75/C
TA = 100/C
f > 15 Hz
IFAV
IFAV
IFRM
TA = 25/C
IFSM
1 A 1)
0.75 A 1)
10 A 1)
50 A
1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
58 28.02.2002
Page 1

1N 4001 ... 1N 4007, 1N 4007-1300
EM 513, EM 516, EM 518
Rating for fusing – Grenzlastintegral, t < 10 ms
TA = 25/C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics
Forward voltage – Durchlaßspannung
Tj = 25/C
Leakage current – Sperrstrom
Tj = 25/C
Tj = 100/C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
IF = 1 A
VR = VRRM
VR = VRRM
i2t 12.5 A2s
Tj – 50…+175/C
TS – 50…+175/C
Kennwerte
VF < 1.1 V
IR < 5 :A
IR < 50 :A
RthA < 45 K/W 1)
1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
28.02.2002
59
Page 2
Part Number 1N4007-1300
Manufactur Diotec Semiconductor
Description Silicon Rectifiers
Total Page 2 Pages
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