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EIC Semiconductor
EIC Semiconductor

1N4007G Datasheet

(1N4001G - 1N4007G) Glass Passivated Junction Silicon Rectifiers


1N4007G Datasheet Preview


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1N4001G - 1N4007G
BY133G
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
www.DataSheet4U.com* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
1N 1N 1N 1N 1N 1N 1N
SYMBOL 4001G 4002G 4003G 4004G 4005G 4006G 4007G
VRRM 50 100 200 400 600 800 1000
VRMS
35
70 140 280 420 560 700
VDC 50 100 200 400 600 800 1000
BY
133G
1300
910
1300
UNIT
V
V
V
IF(AV)
1.0
A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
30
1.0
5.0
50
8
45
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : Mar 23, 2002
DataSheet 4 U .com
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Page 1

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RATING AND CHARACTERISTIC CURVES ( 1N4001G - BY133G )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
Ta = 25 °C
24
18
12
6
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
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FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10 10
Ta = 100 °C
1.0
Pulse Width = 300 µs
2% Duty Cycle
0.1
TJ = 25 °C
1.0
0.1
Ta = 25 °C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
DataSheet4 U .com
Rev. 01 : Mar 23, 2002
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Page 2
Part Number 1N4007G
Manufactur EIC Semiconductor
Description (1N4001G - 1N4007G) Glass Passivated Junction Silicon Rectifiers
Total Page 2 Pages
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