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ST Microelectronics
ST Microelectronics

1803DFH Datasheet

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1803DFH Datasheet Preview


® ST1803DFH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s NEW Fully Plastic TO-220 for HIGH
VOLTAGE APPLICATIONS
www.DataSheet4Us.coNmEW SERIES, ENHANCED PERFORMANCE
s INTEGRATED FREE WHEELING DIODE
s HIGH VOLTAGE CAPABILITY ( > 1500 V )
s HIGH SWITCHING SPEED
s TIGTHER hfe CONTROL
s IMPROVED RUGGEDNESS
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s CREEPAGE DISTANCE PATH > 4 mm
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOR
TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
TO-220FH
INTERNAL SCHEMATIC DIAGRAM
RBE =20
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Visol
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Total Dissipation at Tc = 25 oC
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
December 2002
Value
1500
600
7
10
15
4
40
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
oC
oC
1/6
Page 1

ST1803DFH
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
3.125
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V Tj = 125 oC
IEBO
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V(BR)EBO
VCE(sat)
Emitter Cut-off Current
(IC = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 4 V
IE = 700 mA
IC = 4 A
IC = 4 A
IB = 0.8 A
IB = 1.2 A
VBE(sat)Base-Emitter
Saturation Voltage
IC = 4 A
IB = 0.8 A
hFEDC Current Gain
IC = 1 A
IC = 4.5 A
IC = 4.5 A
VCE = 5 V
VCE = 1 V
VCE = 5 V
VF Diode Forward Voltage IF = 5 A
INDUCTIVE LOAD
IC = 4 A
ts Storage Time
tf Fall Time
LB = 5 µH
f = 16 KHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IBon(END) = 0.8 A
VBB = -2.5 V
(see figure 1)
Min. Typ.
130
7
3
10 15
5
5
1.5
2.7
0.3
Max.
1
2
400
5
1.5
1.2
20
9
2
4
0.6
Unit
mA
mA
mA
V
V
V
V
V
µs
µs
Safe Operating Area
Thermal Impedance
2/6
Page 2

Derating Curve
Output Characteristics
ST1803DFH
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Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
DC Current Gain
3/6
Page 3
Part Number 1803DFH
Manufactur ST Microelectronics
Description Search -----> ST1803DFH
Total Page 6 Pages
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