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Infineon Technologies
Infineon Technologies

17N80C3 Datasheet

SPP17N80C3


17N80C3 Datasheet Preview


CoolMOS® Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPP17N80C3
800 V
0.29
88 nC
PG-TO220-3
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
SPP17N80C3
Package
PG-TO220-3
Marking
17N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.4 A, V DD=50 V
I D=17 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.91
page 1
Value
17
11
51
670
0.5
17
50
±20
±30
227
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2011-09-27
Page 1

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
SPP17N80C3
Value
17
51
4
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10s
min.
Values
typ.
Unit
max.
- - 0.55 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=17 A
V GS(th) V DS=V GS, I D=1.0 mA
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
800
-
2.1
-
V DS=800 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=11 A,
T j=25 °C
-
-
-
V GS=10 V, I D=11 A,
T j=150 °C
-
R G f =1 MHz, open drain -
- -V
870 -
3 3.9
- 25 µA
150 -
- 100 nA
0.25 0.29
0.67 -
0.85 -
Rev. 2.91
page 2
2011-09-27
Page 2

SPP17N80C3
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=17 A,
R G=4.7 ? , T j=25 °C
-
-
-
-
-
-
-
-
2300
94
72
210
25
15
72
12
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=640 V, I D=17 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
12 - nC
45 -
88 117
5.5 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=I S=17 A,
T j=25 °C
-
t rr V R=400 V,
Q rr I F=I S=17 A,
I rrm di F/dt =100 A/µs
-
-
-
1 1.2 V
550 - ns
15 - µC
51 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4) ISD=ID, di/dt=200A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.91
page 3
2011-09-27
Page 3
Part Number 17N80C3
Manufactur Infineon Technologies
Description SPP17N80C3
Total Page 10 Pages
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