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Fairchild Semiconductor
Fairchild Semiconductor

12P20 Datasheet

Search -----> FQA12P20


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FQA12P20
200V P-Channel MOSFET
May 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
• -12.6A, -200V, RDS(on) = 0.47@VGS = -10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-3P
FQA Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G!
S
!
▶▲
!
D
FQA12P20
-200
-12.6
-7.9
-50.4
± 30
810
-12.6
15
-5.5
150
1.2
-55 to +150
300
Typ
--
0.24
--
Max
0.83
--
40
©2000 Fairchild Semiconductor International
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. B, May 2000
Datasheet pdf - http://www.DataSheet4U.net/
Page 1

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Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -200 V, VGS = 0 V
VDS = -160 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-200
--
--
--
--
--
--
-
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
-5.0
VGS = -10 V, ID = -6.3 A
-- 0.36 0.47
VDS = -40 V, ID = -6.3 A (Note 4)
--
6.6
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 920 1200 pF
-- 190 250
pF
-- 30 40 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -100 V, ID = -11.5 A,
RG = 25
(Note 4, 5)
VDS = -160 V, ID = -11.5 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
20 50
195 400
40 90
60 130
31 40
8.1 --
16 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
--
-- -12.6
A
ISM Maximum Pulsed Drain-Source Diode Forward Current
--
-- -50.4
A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -12.6 A
-- -- -5.0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -11.5 A,
-- 180
dIF / dt = 100 A/µs
(Note 4) -- 1.44
--
--
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.65mH, IAS = -12.6A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -11.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. B, May 2000
Datasheet pdf - http://www.DataSheet4U.net/
Page 2

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Typical Characteristics
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
101 -6.5 V
-6.0 V
Bottom : -5.5 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100 101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.5 V = - 10V
GS
V = - 20V
GS
1.0
0.5
Note : T = 25
J
0.0
0 10 20 30 40
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2400
2000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1600
1200
Ciss
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
800
C
rss
400
0
10-1 100 101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150
25
-55
Notes :
1. VDS = -40V
2. 250μs Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.0
15025
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5 1.0 1.5 2.0 2.5
-VSD , Source-Drain Voltage [V]
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = -40V
10
V = -100V
DS
8 VDS = -160V
6
4
2
Note : ID = -11.5 A
0
0 5 10 15 20 25 30 35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, May 2000
Datasheet pdf - http://www.DataSheet4U.net/
Page 3
Part Number 12P20
Manufactur Fairchild Semiconductor
Description Search -----> FQA12P20
Total Page 8 Pages
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