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Infineon Technologies
Infineon Technologies

09N03LA Datasheet

Search -----> IPB09N03LA / IPD09N03LA


09N03LA Datasheet Preview


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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
P-TO263-3-2
• 175 °C operating temperature
• dv /dt rated
IPB09N03LA
IPI09N03LA, IPP09N03LA
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
8.9 m
50 A
P-TO262-3-1
P-TO220-3-1
Type
IPB09N03LA
IPI09N03LA
IPP09N03LA
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
Q67042-S4151
Q67042-S4152
Q67042-S4153
Marking
09N03LA
09N03LA
09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C1)
T C=100 °C
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C2)
I D=45 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
46
350
75
6
±20
63
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.3
page 1
2003-12-18
Page 1

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Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area4)
IPB09N03LA
IPI09N03LA, IPP09N03LA
min.
Values
typ.
Unit
max.
- - 2.4 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=20 µA
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
V DS=25 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=30 A
V GS=4.5 V, I D=30 A,
SMD version
V GS=10 V, I D=30 A
V GS=10 V, I D=30 A,
SMD version
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
25
1.2
-
-
-
-
-
-
-
-
21
- -V
1.6 2
0.1 1 µA
10 100
10 100 nA
12.4 15.5 m
12.1 15.1
7.7 9.2
7.4 8.9
1 -
42 - S
1) Current is limited by bondwire; with an R thJC=2.4 K/W the chip is able to carry 64 A.
2) See figure 3
3) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3
page 2
2003-12-18
Page 2

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Parameter
Symbol Conditions
IPB09N03LA
IPI09N03LA, IPP09N03LA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7
-
-
-
-
-
-
-
1240
530
81
9
88
22
4.2
1649 pF
704
122
13 ns
132
33
6
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs - 4.4 5.8 nC
Q g(th)
- 2.0 2.6
Q gd V DD=15 V, I D=25 A, - 3.1 4.7
Q sw
V GS=0 to 5 V
- 5.5 7.9
Q g - 10 14
V plateau
- 3.5 - V
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
- 9 12 nC
Q oss
V DD=15 V, V GS=0 V
-
11 15
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
- - 50 A
- - 350
- 0.98 1.2 V
- - 10 nC
5) See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2003-12-18
Page 3

www.DataSheet4U.com
1 Power dissipation
P tot=f(T C)
70
60
50
40
30
20
10
0
0 50 100
T C [°C]
3 Safe operation area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
1000
150
limited by on-state
resistance
1 µs
100
10
10 µs
100 µs
DC
1 ms
10 ms
1
0.1
Rev. 1.3
1 10
V DS [V]
2 Drain current
I D=f(T C); V GS10 V
IPB09N03LA
IPI09N03LA, IPP09N03LA
60
40
20
0
200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
200
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
100 010-6 100-5 100-4 10-03 10-02 10-10 100 1
t p [s]
page 4
2003-12-18
Page 4
Part Number 09N03LA
Manufactur Infineon Technologies
Description Search -----> IPB09N03LA / IPD09N03LA
Total Page 10 Pages
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