WESTCODE Positive development in power electronics
Notes on Ratings and Characteristics
1.0 Collector-emitter voltage
This is measured with a mechanical short circuit connected between gate and emitter. The gate to
cathode should not be open-circuit when device is required to support voltage collector to emitter, as the
device may be damaged.
2.0 Peak gate-emitter voltage
This is measured with a mechanical short circuit connected between collector and emitter.
3.0 Collector current (IGBT) and Forward current (Diode)
DC condition represents the nominal operating current for the device.
I C ( AV ) (TC )
(T j − Tc )
4.0 Maximum power
The maximum power dissipation for the IGBT under continuous operating conditions, double side cooled.
5.0 Collector-emitter saturation voltage
The figures given in the characteristics, at the nominal operating current, are supplemented by figures 1 &
2, which give the typical and maximum saturation voltage against collector current. Curves were
measured with a forward gate voltage of +15V.
6.0 ABCD Constants
The on-state characteristic IC vs VCE(SAT), is represented in two ways;
(i) the well established V0 and rs tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VCE(SAT) in
terms of IC given as:
( )VCE(sat) = A + B ⋅ ln IC + C ⋅ IC + D ⋅ IC
The constants, derived by curve fitting software, are given in this report for both typical & maximum hot
characteristics where possible. The resulting values for VCE(SAT) agree with the true device characteristic
over a limited current range which is generally that over which the curve is plotted.
7.0 Transfer characteristic.
The typical transfer characteristics, at 25 & 125°C, are included in figures 3 & 4 against collector currents
of 700A, 1000A and 1400A.
8.0 Leakage currents
These are measured at grade voltage and maximum junction temperature. For ICES, VGE = short circuit.
Note: typical values would be much lower.
9.0 Dynamic gate characteristics
Typical values of gate charge and peak current against series gate resistance, at turn-on and turn-off, are
included in figures 5 to 8, device is measured under normal conditions with VCE>20V. Curves are included
for gate voltage in the range ±5 to 20V.
Data Sheet T1400TA18A Issue 1
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