| Description | WTC6401 P-Channel Enhancement Mode Power MOSFET 1 3 DRAIN DRAIN CURRENT -4.3 AMPERES DRAIN SOURCE VOLTAGE -12 VOLTAGE *Super High Dense Cell Design For Low RDS(ON) www.DataSheet4U.com R DS(ON) <50mΩ@V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *SOT-23 Package Features: GATE SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equ... |
| Features |
GATE
SOURCE
2
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
Maximum Ratings(T =25 C Unless Otherwise Specified)
A
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) Pulsed Drain Current
1
Symbol
VDS VGS ID I DM PD R θJA TJ , Tstg
V...
|
| Datasheet |
 WTC6401 Datasheet - 760.13KB |
