| Description | WTC2304 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.7 AMPERS DRAIN SOUCE VOLTAGE 25 VOLTAGE www.DataSheet4U.com Features: 2 SOURCE 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable Application: *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating... |
| Features |
2 SOURCE
3 1 2
*Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable
Application:
*Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,[email protected](TA ,[email protected](TA Pulsed Drain Current1,2 T...
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| Datasheet |
 WTC2304 Datasheet - 771.22KB |
