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MBR20150FCT Datasheet Preview

MBR20150FCT Datasheet

20.0A SCHOTTKY BARRIER RECTIFIERS

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MBR20150FCT pdf
WILLAS
20.0A SCHOTTKY BARRIER RECTIFIERS 150V
1.0A SURFACE MOUNT SCHOTTKYITBOA-2R2R0IERPRAECCKTIAFGIEERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
THRU
MBRF2M0115200F0C-MT+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
FeaturesLow power loss, high efficiency.
High current capability, low forward voltage drop.
HigHhigshurJguenccatpioanbilTitey.mperature Capability
GuPabrd-rFinrgeeforpoavcekrvaoglteagise parvoateiclatibonle.
UltRraohHigSh-psrpoedeudcstwfiotcrhpinagc.king code suffix ”G”
Silicon epitaxial planar chip, metal silicon junction.
LeHada-lforegeepnafrrtes emeperot ednuvcirtofnomr epnatcakl isntagncdoadrdes souf ffix “H”
MILL-oSwTDL-e1a9k5a0g0e/2C28urrent
RoEHSpopxroydumctefeortspaUckLin9g4coVd-e0suflfafixm"mG"ability rating
MHeaMMlcogaoheriksnaitnfurngeree:itcypSpraoeedlnunsdcuitmtafiovbtriteapyraLckeinvgecl o1de suffix "H"
Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
ITO-2200.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.114(2.90)
.098(2.50)
.406(10.30) .138(3.50)
.382(09.0.7710(1).8) .118(3.00)
0.056(1.4)
.642(16.30)
0.040(1.0)
0.024(0.6) .571(14.50)
Maximum RatingsCase : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
OperaMtientghoJdu2n0c2t6ion Temperature : 150°C
0.031(0.8) Typ.
0.031(0.8) Typ.
.171(4.35)
PolarSittyo:raIngdeicTateemd pbyercaattuhroed:e-b5a0n°dC to +150°C
M•• ounTPtoientrgaldPToiohsdieteiromTnah: lAeRrnmyeasilsRtaensciseta1n.3c°eC2/W.2°JCu/nWctJiounnctotioCnatsoeCase
.067(1.70)
Dimensions.i0n3in9c(h1e.s0a0n)d (millimeters)
.035(1.00)
.138(3.50)
Weight : Approximated 0.011 gram
Maximum
Maximum Maximum
.022(0.55)
MACXaItMalUogM RATINGSRAeNcDurrEeLnEt CTRICARLMCSHARACTDECRISTICS
Number
Peak Reverse Voltage Blocking
Ratings at 25℃ ambient temperature unlessVoothltearwgiese specified.
Voltage
Single phaseMhBalRf w2a0v1e,5600FHCz,Tresistive of indu1c5tiv0eVload.
105V
150 V
  For capacitive load, derate current by 20%
MAX.(1.80)
.108(2.75)
.091(2.30)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .F1M8191(040.-8M0H)FM1150-MH FM1200-MH UNIT
Marking CEoldeectrical Characteristics @ 25°C Unless O12therw1i3se Spe1c4ified 15 16
18 .16910(4.30) 115 120
Maximum ReAcuvrerernatgPeeaFkoRrewvearrsde Voltage IF(AV) VRRM20 A 20 TC =30155 °C 40 50 60
Maximum RMCSuVrroeltangte
VRMS
14
21
28
35
42
80 100 .134(135.400) 200 Volts
56 70 .110(120.554) 140 Volts
Maximum DCPBelaockkiFngoVrwoltaargde Surge
IFSM
Maximum AvCeruagrreeFnotrward Rectified Current
  Maximum
Peak ForwardInSusrtgaenCtuarnreento8u.3sms single half sine-wave
superimposedFoonrrwateadrdloaVdo(JlEtaDgEeC method)
Typical ThermaMl RBesRis2ta0n1c5e0(NFoCteT2)
VF
Typical Junction Capacitance (Note 1)
Operating Temperature Range
VF
Storage Temperature Range
 
VDC180A 20
IO
 
IFSM
8.33m0 s, half 40
sine wave
RΘ.J9A2V
CJ
TJ.75V
TSTG
IFM = 10A
TJ = 2 5°C
I -F5M5 =to1+01A25
TJ = 125°C
50 60
80 100 150 200 Volts
1.0 Amps
  
30 Amps
40
120
 
- 65 to +175
 
 
-55 to +150
.114(2.90)
.098(2.50)
℃/W
PF
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum AveMRraeagvexeiRmresvueemrsCeuCrurerrnenttAatt @T A=25IR
  Rated DC BloRckaintgeVdoDltaCgeBlocking @T A=125℃
NOTES:
Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH.F5M6108(01-M4.H2F2M) 1100-MH FM1150-MH FM1200-MH UNIT
VF
IR25 µ A
5m A
0.50
TJ = 25°C
TJ = 125°C
0.70 .492(120.5.805)
0.9
0.5
10
.031(0.80)
.015(0.38)
0.92
 
Volts
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
  Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Dimensions in inches and (millimeters)
201220-112-06
WWIILLLLAASSEELLEECCTTRROONNICICCOCROPR.P.



WILLAS
WILLAS

MBR20150FCT Datasheet Preview

MBR20150FCT Datasheet

20.0A SCHOTTKY BARRIER RECTIFIERS

No Preview Available !

MBR20150FCT pdf
WILLAS
20.0A SCHOTTKY BARRIER RECTIFIERS 150V
1.0A SURFACE MOUNT SCHOTTKIYTBOA-2R2R0IERPRAECCKTAIFGIEERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
MBRF2M011T52H00RF0UC-MT+
Pb Free Product
Features
BbeaFattvitcgeehr.rpar1erg:oveceAerfvsoseesrrwldaeaegasrkediagfgcnoeu,rewrcrxueacrnrerdetllne(pptnoaetwnrpdoedwrtiohededriresdms)i.saipsl airpetaisotiisnotnavnoecfrfese.urss
Low profile surface mounted application in order to
optimize board space.
Low pPoFw(aevr)(lWos)s, high efficiency.
Hi1g0h current capability, low forward voltage drop.
Hig9h surge capabilityδ.= 0.05 δ = 0.1 δ = 0.2
δ = 0.5
Gu8ardring for overvoltage protection.
Ult7ra high-speed switching.
δ=1
Sili6con epitaxial planar chip, metal silicon junction.
Lea5d-free parts meet environmental standards of
MIL4-STD-19500 /228
RoH3S product for packing code suffix "G"
Hal2ogen free product for packing code suffix "H"
T
Me1chanical data IF(av) (A)
δ=tp/T
tp
0
Epox0y : U1L942-V03rate4d fla5me r6etar7dant8 9 10 11 12
Package outline
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, perSdOiDo-d1e23).H
IF(av)(A)
12
10
8
6
4
T
2
δ=tp/T
0
0 25
tp
50
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Rth(j-a)=Rth(j-c)
0.071(1.8)
0.056(1.4)
Rth(j-a)=15°C/W
Tamb(°C)
75 100
125
0.040(1.0)
10.50024(0.6) 175
CFaigse. 3: M: Nolodnedrepplaesttiitci,vSeOsDu-r1g2e3Hpeak forward current ,
Tveermrsiunaslso:vPelarltoeaddtedrmuirnaatliso,nso(mldearxaibmleupmervMaIlLu-eSsT,Dp-7e5r 0
diode). Method 2026
Fig. 4: R0.0e31l(a0.t8i)vTeyp. variation of thermal impe0.d03a1(n0.c8)eTyp.
junction to case versus pulse duration (per diode).
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
MounIMtin(Ag)Position : Any
150
Weight
:
Approximated
0.011
gram
Zth(j-c)/Rth(j-c)
1.0
125 MAXIMUM RATINGS AND ELECTRICAL CHAR0A.8CTERISTICS
100
Ratings at 25℃ ambient temperature unless otherwise specTicf=ie50d°C.
δ = 0.5
0.6
Single phas7e5 half wave, 60Hz, resistive of inductive load.
  For capacit5iv0e load, derate current by 20%
IM
25
RATINGS
Marking Code
t
δ=0.5
t(s)
Maximum Rec10uEr-r3ent Peak Rever1sEe-V2oltage
Maximum RMS Voltage
Tc=75°C
0.4 δ = 0.2
δ = 0.1
T
SYMBOL TFc=M12152°C0-MH FM1300-M.2H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14Single pulse
15
16tp(s) 18
δ=t1p/0T
tp 115
120
1E-1 VRRM
210E+0 300.10E-3 40
50 1E-2 60
810E-1 100
1E1+500
200 Volts
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum AvFeirgag.e5F:orRwaerdveRrescetifieledaCkuarrgenet current veIOrsus reverse
  voltage applied (typical values, per  diode).
Fig. 6: Junction capacita1.n0ce versus reverse voltage
applied (typical values, p  er diode).
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal ReIRsi(sµtaAn)ce (Note 2)
Typical Junc1tioEn+5Capacitance (Note 1)
RΘJA
CJ
  C(pF)
  1000
40
120
 
 
Operating Te1mEp+e4rature Range
Storage Temperature Range
Tj=175°C
Tj=150°C
TJ
TSTG
-55 to +125
 
- 65 to +175
-55 to +15F0T=j=12M5H°Cz
  1E+3
Tj=125°C
Amps
 
Amps
℃/W
PF
1E+2 CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Tj=100°C
SYMBOL FM120-MH FM130-MH10F0M140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9 0.92 Volts
Maximum Av1eEra+g1e Reverse Current at @T A=25℃
IR
0.5  
mAmps
Rated DC Bl1oEck+in0g Voltage
@TTAj==251°C25℃
10
 
NOTES:
1E-1
1- Measured at 1 MH0Z and ap2p5lied reve5rs0e voltag7e5of 4.0 V1D0C0.
VR(V)
125 150
10
12
VR(V)
5 10 20
50 100 200
2- Thermal Resistance From Junction to Ambient
 
 
201220-112-06
WWIILLLLAASSEELLEECCTTRROONNICICCOCORPR.P.


Part Number MBR20150FCT
Description 20.0A SCHOTTKY BARRIER RECTIFIERS
Maker WILLAS
Total Page 3 Pages
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